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IS61LV2568L-10TL PDF预览

IS61LV2568L-10TL

更新时间: 2024-11-16 03:05:35
品牌 Logo 应用领域
美国芯成 - ISSI /
页数 文件大小 规格书
14页 75K
描述
256K x 8 HIGH-SPEED CMOS STATIC RAM

IS61LV2568L-10TL 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TSOP2
包装说明:TSOP2, TSOP44,.46,32针数:44
Reach Compliance Code:compliantECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41Factory Lead Time:8 weeks
风险等级:5.57最长访问时间:10 ns
I/O 类型:COMMONJESD-30 代码:R-PDSO-G44
JESD-609代码:e3长度:18.415 mm
内存密度:2097152 bit内存集成电路类型:STANDARD SRAM
内存宽度:8湿度敏感等级:3
功能数量:1端子数量:44
字数:262144 words字数代码:256000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:256KX8
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:TSOP2封装等效代码:TSOP44,.46,32
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL峰值回流温度(摄氏度):260
电源:3.3 V认证状态:Not Qualified
座面最大高度:1.2 mm最大待机电流:0.003 A
最小待机电流:3 V子类别:SRAMs
最大压摆率:0.06 mA最大供电电压 (Vsup):3.63 V
最小供电电压 (Vsup):2.97 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Matte Tin (Sn) - annealed
端子形式:GULL WING端子节距:0.8 mm
端子位置:DUAL处于峰值回流温度下的最长时间:40
宽度:10.16 mm

IS61LV2568L-10TL 数据手册

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®
IS61LV2568L  
ISSI  
JULY2005  
256K x 8 HIGH-SPEED CMOS STATIC RAM  
DESCRIPTION  
FEATURES  
The ISSI IS61LV2568L is a very high-speed, low power,  
262,144-wordby8-bitCMOSstaticRAM.TheIS61LV2568L  
is fabricated using ISSI's high-performance CMOS tech-  
nology. This highly reliable process coupled with innova-  
tive circuit design techniques, yields higher performance  
and low power consumption devices.  
• High-speed access time: 8, 10 ns  
• Operating Current: 50mA (typ.)  
• Standby Current: 700µA (typ.)  
• Multiple center power and ground pins for  
greater noise immunity  
When CE is HIGH (deselected), the device assumes a  
standby mode at which the power dissipation can be  
reduced down to 36mW (max.) with CMOS input levels.  
• Easy memory expansion with CE and OE  
options  
CE power-down  
The IS61LV2568L operates from a single 3.3V power  
supply and all inputs are TTL-compatible.  
• TTL compatible inputs and outputs  
• Single 3.3V power supply  
• Packages available:  
The IS61LV2568L is available in 36-pin 400-mil SOJ and  
44-pin TSOP (Type II) packages.  
– 36-pin 400-mil SOJ  
– 44-pin TSOP (Type II)  
• Lead-free available  
FUNCTIONAL BLOCK DIAGRAM  
256K X 8  
MEMORY ARRAY  
A0-A17  
DECODER  
V
DD  
GND  
I/O  
DATA  
COLUMN I/O  
I/O0-I/O7  
CIRCUIT  
CE  
CONTROL  
CIRCUIT  
OE  
WE  
Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time  
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to  
obtain the latest version of this device specification before relying on any published information and before placing orders for products.  
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774  
Rev. C  
1
07/25/05  

IS61LV2568L-10TL 替代型号

型号 品牌 替代类型 描述 数据表
IS61LV2568L-10T ISSI

完全替代

256K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV2568-10TI ISSI

功能相似

x8 SRAM

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IS61LV2568LL-15KI ISSI

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