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IS61LV256AL-10TL PDF预览

IS61LV256AL-10TL

更新时间: 2024-02-28 07:01:16
品牌 Logo 应用领域
美国芯成 - ISSI /
页数 文件大小 规格书
13页 96K
描述
32K x 8 LOW VOLTAGE CMOS STATIC RAM

IS61LV256AL-10TL 数据手册

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®
IS61LV256AL  
ISSI  
32K x 8 LOW VOLTAGE  
CMOS STATIC RAM  
MARCH 2006  
DESCRIPTION  
FEATURES  
The ISSI IS61LV256AL is a very high-speed, low power,  
32,768-word by 8-bit static RAM. It is fabricated using  
ISSI's high-performance CMOS technology. This highly  
reliable process coupled with innovative circuit design  
techniques, yields access times as fast as 8 ns maximum.  
• High-speed access times:  
— 10 ns  
• Automatic power-down when chip is deselected  
• CMOS low power operation  
— 60 µW (typical) CMOS standby  
— 65 mW (typical) operating  
When CE is HIGH (deselected), the device assumes a  
standbymodeatwhichthepowerdissipationisreducedto  
150 µW (typical) with CMOS input levels.  
• TTL compatible interface levels  
• Single 3.3V power supply  
Easy memory expansion is provided by using an active  
LOW Chip Enable (CE). The active LOW Write Enable  
(WE) controls both writing and reading of the memory.  
• Fully static operation: no clock or refresh  
required  
• Three-state outputs  
• Lead-free available  
The IS61LV256AL is available in the JEDEC standard 28-  
pin,300-milSOJandthe450-milTSOP(TypeI)packages.  
FUNCTIONAL BLOCK DIAGRAM  
32K X 8  
MEMORY ARRAY  
A0-A14  
DECODER  
VDD  
GND  
I/O  
DATA  
COLUMN I/O  
I/O0-I/O7  
CIRCUIT  
CE  
CONTROL  
CIRCUIT  
OE  
WE  
Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability  
arisingoutoftheapplicationoruseofanyinformation, productsorservicesdescribedherein. Customersareadvisedtoobtainthelatestversionofthisdevicespecificationbeforerelyingonany  
publishedinformationandbeforeplacingordersforproducts.  
Integrated Silicon Solution, Inc. — 1-800-379-4774  
1
Rev. A  
03/17/06  

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