®
IS61LV2568L
IS61LV2568LL
ISSI
256K x 8 HIGH-SPEED CMOS STATIC RAM
PRELIMINARYINFORMATION
SEPTEMBER2002
FEATURES
• High-speed access time:
IS61LV2568L: 8, 10 ns
IS61LV2568LL: 12, 15 ns
• Operating Current:
• Packages available:
– 36-pin 400-mil SOJ
– 44-pin TSOP (Type II)
– 36-ball mini BGA (6mm x 8mm)
IS61LV2568L: 50mA (typ.)
IS61LV2568LL: 25mA (typ.)
• Standby Current:
DESCRIPTION
The ISSI IS61LV2568L/IS61LV2568LL is a very high-
speed, low power, 262,144-word by 8-bit CMOS static
RAM. The IS61LV2568L/IS61LV2568LL is fabricated us-
ingISSI'shigh-performanceCMOStechnology.Thishighly
reliable process coupled with innovative circuit design
techniques, yields higher performance and low power
consumption devices.
IS61LV2568L: 500µA (typ.)
IS61LV2568LL: 250µA(typ.)
• Multiple center power and ground pins for
greater noise immunity
• Easy memory expansion with CE and OE
When CE is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down to 36mW (max.) with CMOS input levels.
options
• CE power-down
• TTL compatible inputs and outputs
• Single 3.3V power supply
The S61LV2568L/IS61LV2568LL operates from a single
3.3V power supply and all inputs are TTL-compatible.
TheS61LV2568L/IS61LV2568LL isavailablein36-pin400-
milSOJ,44-pinTSOP(TypeII),and36-ballminiBGA(6mm
x 8mm) packages.
FUNCTIONAL BLOCK DIAGRAM
256K X 8
MEMORY ARRAY
A0-A17
DECODER
V
DD
GND
I/O
DATA
CIRCUIT
COLUMN I/O
I/O0-I/O7
CE
OE
WE
CONTROL
CIRCUIT
Copyright © 2002 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. 00D
1
09/12/02