LOWꢀChipꢀEnableꢀ(CE).
TheꢀactiveꢀLOWWriteꢀEnableꢀ(WE)
IS61LV256AL
32K x 8 LOW VOLTAGE
CMOS STATIC RAM
AUGUST 2009
DESCRIPTION
FEATURES
TheꢀISSIꢀIS61LV256ALꢀisꢀaꢀveryꢀhigh-speed,ꢀlowꢀpower,
32,768-wordꢀbyꢀ8-bitꢀstaticꢀRAM.ꢀItꢀisꢀfabricatedꢀusingꢀISSI's
high-performanceꢀCMOSꢀtechnology.ꢀThisꢀhighlyꢀreliableꢀ
process coupled with innovative circuit design techniques,
yieldsꢀaccessꢀtimesꢀasꢀfastꢀasꢀ8ꢀnsꢀmaximum.
•ꢀ High-speedꢀaccessꢀtimes:ꢀ
— 10 ns
•ꢀ Automaticꢀpower-downꢀwhenꢀchipꢀisꢀdeselected
•ꢀ CMOSꢀlowꢀpowerꢀoperation
— 60 µWꢀ(typical)ꢀCMOSꢀstandby
— 65 mW (typical) operating
When CEꢀisꢀHIGHꢀ(deselected),ꢀtheꢀdeviceꢀassumesꢀaꢀ
standby mode at which the power dissipation is reduced to
150ꢀµWꢀ(typical)ꢀwithꢀCMOSꢀinputꢀlevels.
•ꢀ TTLꢀcompatibleꢀinterfaceꢀlevels
•ꢀ Singleꢀ3.3Vꢀpowerꢀsupply
Easyꢀmemoryꢀexpansionꢀisꢀprovidedꢀbyꢀusingꢀanꢀactiveꢀ
•ꢀ Fullyꢀstaticꢀoperation:ꢀnoꢀclockꢀorꢀrefreshꢀ
required
controls both writing and reading of the memory.
•ꢀ Three-stateꢀoutputs
•ꢀ Lead-freeꢀavailable
Theꢀ IS61LV256ALꢀ isꢀ availableꢀ inꢀ theꢀ JEDECꢀ standardꢀ
28-pin,ꢀ300-milꢀSOJꢀandꢀtheꢀ450-milꢀTSOPꢀ(TypeꢀI)ꢀpack-
ages.
FUNCTIONAL BLOCK DIAGRAM
32KꢀXꢀ8
MEMORYꢀARRAY
A0-A14
DECODER
VDD
GND
I/O
DATA
COLUMNꢀI/O
I/O0-I/O7
CIRCUIT
CE
CONTROL
CIRCUIT
OE
WE
Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no
liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on
any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — 1-800-379-4774
1
Rev. C
07/29/09