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IS61LV2568L-10TI PDF预览

IS61LV2568L-10TI

更新时间: 2024-01-11 18:28:49
品牌 Logo 应用领域
美国芯成 - ISSI 存储内存集成电路静态存储器光电二极管
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14页 75K
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IS61LV2568L-10TI 数据手册

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®
IS61LV2568L  
ISSI  
JULY2005  
256K x 8 HIGH-SPEED CMOS STATIC RAM  
DESCRIPTION  
FEATURES  
The ISSI IS61LV2568L is a very high-speed, low power,  
262,144-wordby8-bitCMOSstaticRAM.TheIS61LV2568L  
is fabricated using ISSI's high-performance CMOS tech-  
nology. This highly reliable process coupled with innova-  
tive circuit design techniques, yields higher performance  
and low power consumption devices.  
• High-speed access time: 8, 10 ns  
• Operating Current: 50mA (typ.)  
• Standby Current: 700µA (typ.)  
• Multiple center power and ground pins for  
greater noise immunity  
When CE is HIGH (deselected), the device assumes a  
standby mode at which the power dissipation can be  
reduced down to 36mW (max.) with CMOS input levels.  
• Easy memory expansion with CE and OE  
options  
CE power-down  
The IS61LV2568L operates from a single 3.3V power  
supply and all inputs are TTL-compatible.  
• TTL compatible inputs and outputs  
• Single 3.3V power supply  
• Packages available:  
The IS61LV2568L is available in 36-pin 400-mil SOJ and  
44-pin TSOP (Type II) packages.  
– 36-pin 400-mil SOJ  
– 44-pin TSOP (Type II)  
• Lead-free available  
FUNCTIONAL BLOCK DIAGRAM  
256K X 8  
MEMORY ARRAY  
A0-A17  
DECODER  
V
DD  
GND  
I/O  
DATA  
COLUMN I/O  
I/O0-I/O7  
CIRCUIT  
CE  
CONTROL  
CIRCUIT  
OE  
WE  
Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time  
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to  
obtain the latest version of this device specification before relying on any published information and before placing orders for products.  
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774  
Rev. C  
1
07/25/05  

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