IS61LV25616L-12KI

更新时间： 2024-11-16 05:11:55

品牌	Logo	应用领域
美国芯成 - ISSI		/
页数	文件大小	规格书
11页	65K
描述
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

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IS61LV25616L

ISSI

256K x 16 HIGH SPEED ASYNCHRONOUS

CMOS STATIC RAM WITH 3.3V SUPPLY

JUNE 2002

DESCRIPTION

FEATURES

The ISSI IS61LV25616L is a high-speed, 4,194,304-bit

static RAM organized as 262,144 words by 16 bits. It is

fabricated using ISSI's high-performance CMOS technol-

ogy. This highly reliable process coupled with innovative

circuitdesigntechniques,yieldshigh-performanceandlow

power consumption devices.

• High-speed access time:

— 10, 12, and 15 ns

• Low Active Power

— Less than 90mA (typ.) Active Current

• Low standby power:

— Less than 1 mA (typ.) CMOS standby

When CE is HIGH (deselected), the device assumes a

standby mode at which the power dissipation can be

reduced down with CMOS input levels.

• TTL compatible interface levels

• Single 3.3V power supply

• Fully static operation: no clock or refresh

required

Easy memory expansion is provided by using Chip Enable

and Output Enable inputs, CE and OE. The active LOW

Write Enable (WE) controls both writing and reading of the

memory.A data byte allows Upper Byte (UB) and Lower

Byte (LB) access.

• Three state outputs

• Data control for upper and lower bytes

• Industrial temperature available

The IS61LV25616L is packaged in the JEDEC standard

44-pin400-milSOJ,44-pinTSOPTypeII,44-pinLQFPand

48-pin Mini BGA (8mm x 10mm).

FUNCTIONAL BLOCK DIAGRAM

256K x 16

MEMORY ARRAY

A0-A17

DECODER

VCC

GND

I/O0-I/O7

Lower Byte

I/O

DATA

CIRCUIT

COLUMN I/O

I/O8-I/O15

Upper Byte

CONTROL

CIRCUIT

without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to

obtain the latest version of this device specification before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

Rev. B

06/28/02

12 3 4 5 6 7...11

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与IS61LV25616L-12KI相关器件

型号	品牌	获取价格	描述	数据表
IS61LV25616L-12TI	ISSI	获取价格	256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV25616L-15K	ISSI	获取价格	256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV25616L-15KI	ISSI	获取价格	256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV25616L-15T	ISSI	获取价格	256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV25616L-15TI	ISSI	获取价格	Standard SRAM, 256KX16, 15ns, CMOS, PDSO44, TSOP2-44
IS61LV256-20J	ISSI	获取价格	32K x 8 LOW VOLTAGE CMOS STATIC RAM
IS61LV256-20J	ICSI	获取价格	32K X 8 LOW VOLTAGE CMOS STATIC RAM
IS61LV256-20JI	ICSI	获取价格	32K X 8 LOW VOLTAGE CMOS STATIC RAM
IS61LV256-20N	ISSI	获取价格	32K x 8 LOW VOLTAGE CMOS STATIC RAM
IS61LV256-20NI	ETC	获取价格	x8 SRAM

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