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IS61LPS25636A-200B3I-TR

更新时间： 2024-11-13 22:57:59
品牌 Logo 应用领域
美国芯成 - ISSI 静态存储器
页数 文件大小 规格书
35页 2595K
描述
IC SRAM 9M PARALLEL 165TFBGA

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中文翻译

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IS61LPS25636A-200B3I-TR 数据手册

 浏览型号IS61LPS25636A-200B3I-TR的Datasheet PDF文件第2页浏览型号IS61LPS25636A-200B3I-TR的Datasheet PDF文件第3页浏览型号IS61LPS25636A-200B3I-TR的Datasheet PDF文件第4页浏览型号IS61LPS25636A-200B3I-TR的Datasheet PDF文件第5页浏览型号IS61LPS25636A-200B3I-TR的Datasheet PDF文件第6页浏览型号IS61LPS25636A-200B3I-TR的Datasheet PDF文件第7页 
IS61LPS51218A, IS61LPS25636A, IS61LPS25632A, IS64LPS25636A,  
IS61VPS51218A, IS61VPS25636A  
256K x 36, 256K x 32, 512K x 18  
9 Mb SYNCHRONOUS PIPELINED,  
SINgLE CYCLE DESELECT STATIC RAM  
JUNE 2015  
FEATURES  
DESCRIPTION  
Theꢀ ISSIꢀ IS61LPS/VPS25636A,ꢀ IS61LPS25632A,  
IS64LPS25636Aꢀ andꢀ IS61LPS/VPS51218Aꢀ areꢀ high-  
speed,ꢀ low-powerꢀ synchronousꢀ staticꢀ RAMs designed  
to provide burstable, high-performance memory for com-  
municationꢀandꢀnetworkingꢀapplications.ꢀTheꢀIS61LPS/  
VPS25636Aꢀ andꢀ IS64LPS25636Aꢀ areꢀ organizedꢀ asꢀ  
262,144ꢀ wordsꢀ byꢀ 36ꢀ bits.ꢀ ꢀ Theꢀ IS61LPS25632Aꢀ is  
organizedꢀasꢀ262,144ꢀwordsꢀbyꢀ32ꢀbits.ꢀTheꢀIS61LPS/  
VPS51218Aꢀisꢀorganizedꢀasꢀ524,288ꢀwordsꢀbyꢀ18ꢀbits.ꢀ  
Fabricatedꢀ withꢀ ISSI'sꢀ advancedꢀ CMOSꢀ technology,  
theꢀdeviceꢀintegratesꢀaꢀ2-bitꢀburstꢀcounter,ꢀhigh-speedꢀ  
SRAMꢀcore,ꢀandꢀhigh-driveꢀcapabilityꢀoutputsꢀintoꢀaꢀsingleꢀ  
monolithic circuit. All synchronous inputs pass through  
registersꢀcontrolledꢀbyꢀaꢀpositive-edge-triggeredꢀsingleꢀ  
clock input.  
• Internalꢀself-timedꢀwriteꢀcycle  
• IndividualꢀByteꢀWriteꢀControlꢀandꢀGlobalꢀWrite  
• Clockꢀcontrolled,ꢀregisteredꢀaddress,ꢀdataꢀand  
control  
• BurstꢀsequenceꢀcontrolꢀusingꢀMODEꢀinput  
• Threeꢀchipꢀenableꢀoptionꢀforꢀsimpleꢀdepthꢀex-  
pansion and address pipelining  
• Commonꢀdataꢀinputsꢀandꢀdataꢀoutputs  
• AutoꢀPower-downꢀduringꢀdeselect  
• Singleꢀcycleꢀdeselect  
• SnoozeꢀMODEꢀforꢀreduced-powerꢀstandby  
• JTAGꢀBoundaryꢀScanꢀforꢀBGAꢀpackage  
• PowerꢀSupply  
Writeꢀcyclesꢀareꢀinternallyꢀself-timedꢀandꢀareꢀinitiatedꢀbyꢀ  
theꢀrisingꢀedgeꢀofꢀtheꢀclockꢀinput.ꢀWriteꢀcyclesꢀcanꢀbeꢀ  
one to four bytes wide as controlled by the write control  
inputs.  
LPS:ꢀVdd 3.3V + 5%, Vddq 3.3V/2.5V + 5%  
VPS:ꢀVdd 2.5V + 5%, Vddq 2.5V + 5%  
Separatebyteenablesallowindividualbytestobewritten.  
Theꢀbyteꢀwriteꢀoperationꢀisꢀperformedꢀbyꢀusingꢀtheꢀbyteꢀ  
write enable (BWE) input combined with one or more  
individual byte write signals (BWx). Inꢀaddition,ꢀGlobalꢀ  
Writeꢀ(GW) is available for writing all bytes at one time,  
regardless of the byte write controls.  
• JEDECꢀ100-PinꢀQFP,ꢀ119-ballꢀBGA,ꢀandꢀ165-  
ballꢀBGAꢀpackages  
• Lead-freeꢀavailable  
BurstsꢀcanꢀbeꢀinitiatedꢀwithꢀeitherꢀADSP (Address Status  
Processor)ꢀorꢀADSC (Address Status Cache Controller)  
inputꢀpins.ꢀSubsequentꢀburstꢀaddressesꢀcanꢀbeꢀgener-  
ated internally and controlled by the ADV (burst address  
advance) input pin.  
Theꢀmodeꢀpinꢀisꢀusedꢀtoꢀselectꢀtheꢀburstꢀsequenceꢀor-  
der,ꢀLinearꢀburstꢀisꢀachievedꢀwhenꢀthisꢀpinꢀisꢀtiedꢀLOW.ꢀ  
InterleaveꢀburstꢀisꢀachievedꢀwhenꢀthisꢀpinꢀisꢀtiedꢀHIGHꢀ  
or left floating.  
FAST ACCESS TIME  
Symbol  
Parameter  
250  
2.6ꢀ  
4ꢀ  
200  
3.1ꢀ  
5ꢀ  
166  
3.5ꢀ  
6ꢀ  
Units  
ns  
tkq  
ClockꢀAccessꢀTimeꢀ  
CycleꢀTimeꢀ  
tkc  
ns  
Frequencyꢀ  
250ꢀ  
200ꢀ  
166ꢀ  
MHz  
Copyright © 2014 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no  
liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on  
any published information and before placing orders for products.  
Integrated Silicon Solution, Inc.  
1
Rev. N  
05/25/2015  
1234567...35

中文翻译

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IS61LPS25636A-200B3I-TR 替代型号

型号 品牌 替代类型 描述 数据表
IS61LPS25636A-200B3LI-TR ISSI

完全替代

 IC SRAM 9M PARALLEL 165TFBGA

与IS61LPS25636A-200B3I-TR相关器件

型号 品牌 获取价格 描述 数据表
IS61LPS25636A-200B3LI ISSI

获取价格

 		Cache SRAM, 256KX36, 3.1ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, LEAD FREE, PLASTIC, BGA
IS61LPS25636A-200B3LI-TR ISSI

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 		IC SRAM 9M PARALLEL 165TFBGA
IS61LPS25636A-200TQ ISSI

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 		256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
IS61LPS25636A-200TQ2I ISSI

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 		256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
IS61LPS25636A-200TQ2I-TR ISSI

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 		IC SRAM 9M PARALLEL 100TQFP
IS61LPS25636A-200TQ2LI ISSI

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 		暂无描述
IS61LPS25636A-200TQ2LI-TR ISSI

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 		IC SRAM 9M PARALLEL 100TQFP
IS61LPS25636A-200TQI ISSI

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 		256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
IS61LPS25636A-200TQI-TR ISSI

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 		256KX36 CACHE SRAM, 3.1ns, PQFP100, TQFP-100
IS61LPS25636A-200TQLI ISSI

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 		256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM

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