生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.84 |
其他特性: | LOGIC LEVEL COMPATIBLE | 配置: | SINGLE |
最小漏源击穿电压: | 250 V | 最大漏极电流 (ID): | 3.3 A |
最大漏源导通电阻: | 1.3 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSSO-G2 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRLR230 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 7.5A I(D) | TO-252AA | |
IRLR230A | FAIRCHILD |
获取价格 |
ADVANCED POWER MOSFET | |
IRLR230ATF | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 7.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Met | |
IRLR230ATM | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 7.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Met | |
IRLR2703 | INFINEON |
获取价格 |
POWER MOSFET | |
IRLR2703PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 23A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Met | |
IRLR2703TR | INFINEON |
获取价格 |
Power Field-Effect Transistor, 20A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Met | |
IRLR2703TRLPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 23A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Met | |
IRLR2703TRPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 23A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Met | |
IRLR2703TRR | INFINEON |
获取价格 |
Power Field-Effect Transistor, 20A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Met |