Datasheet > IRLR2703TRLPBF

IRLR2703TRLPBF

更新时间： 2024-09-13 20:08:51

品牌	Logo	应用领域
英飞凌 - INFINEON		局域网开关脉冲晶体管
页数	文件大小	规格书
10页	169K
描述
Power Field-Effect Transistor, 23A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

IRLR2703TRLPBF 数据手册

PD- 91335D

IRLR/U2703

HEXFET^®Power MOSFET

l Logic-Level Gate Drive

l Ultra Low On-Resistance

l Surface Mount (IRLR2703)

l Straight Lead (IRLU2703)

l Advanced Process Technology

l Fast Switching

V_DSS= 30V

_DS(on)= 0.045Ω

I_D= 23Aꢀ

l Fully Avalanche Rated

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced

processing techniques to achieve the lowest possible on-resistance per

silicon area. This benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power MOSFETs are well known for,

provides the designer with an extremely efficient device for use in a wide

variety of applications.

D-Pak

TO-252AA

I-Pak

TO-251AA

The D-PAK is designed for surface mounting using vapor phase, infrared, or

wave soldering techniques. The straight lead version (IRFU series) is for

through-hole mounting applications. Power dissipation levels up to 1.5 watts

are possible in typical surface mount applications.

Absolute Maximum Ratings

Parameter

Max.

23 ꢀ

Units

I_D@ T_C= 25°C

_D@ T_C= 100°C

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

I_DM

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

0.30

± 16

V_GS

E_AS

I_AR

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

4.5

5.0

V/ns

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

300 (1.6mm from case )

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

3.3

Units

R_θJC

R_θJA

Case-to-Ambient (PCB mount)**

Junction-to-Ambient

°C/W

110

** When mounted on 1" square PCB (FR-4 or G-10 Material ) ꢀ

For recommended footprint and soldering techniques refer to application note #AN-994

www.irf.com

7/30/03

12 3 4 5 6 7...10

中文翻译

下载PDF

IRLR2703TRLPBF 替代型号

型号	品牌	替代类型	描述	数据表
IRLR2703TRPBF	INFINEON	类似代替	Power Field-Effect Transistor, 23A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Met

与IRLR2703TRLPBF相关器件

型号	品牌	获取价格	描述	数据表
IRLR2703TRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 23A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Met
IRLR2703TRR	INFINEON	获取价格	Power Field-Effect Transistor, 20A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Met
IRLR2703TRRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 23A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Met
IRLR2705	INFINEON	获取价格	HEXFET POWER MOSFET
IRLR2705PBF	INFINEON	获取价格	HEXFET Power MOSFET
IRLR2705TR	INFINEON	获取价格	Power Field-Effect Transistor, 28A I(D), 55V, 0.051ohm, 1-Element, N-Channel, Silicon, Met
IRLR2705TRL	INFINEON	获取价格	Power Field-Effect Transistor, 28A I(D), 55V, 0.051ohm, 1-Element, N-Channel, Silicon, Met
IRLR2705TRLPBF	INFINEON	获取价格	Power Field-Effect Transistor, 28A I(D), 55V, 0.051ohm, 1-Element, N-Channel, Silicon, Met
IRLR2705TRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 28A I(D), 55V, 0.051ohm, 1-Element, N-Channel, Silicon, Met
IRLR2705TRR	INFINEON	获取价格	Power Field-Effect Transistor, 28A I(D), 55V, 0.051ohm, 1-Element, N-Channel, Silicon, Met

与IRLR2703TRLPBF相关文章

SL74HC10N：高性能三输入与非门解析
2024-09-03

78
AIC1781A 电池充电控制器深度解析
2024-09-03

69
Pickering新高压舌簧继电器亮相汽车测试博览会
2024-08-26

100
采用MCU+MPU双处理器架构实现的创新应用设计探索
2024-08-23

114

产品中心

服务支持

精选活动

关于我们

帮助中心

IRLR2703TRLPBF

IRLR2703TRLPBF 数据手册

IRLR2703TRLPBF 替代型号

与IRLR2703TRLPBF相关器件

与IRLR2703TRLPBF相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IRLR2703TRLPBF

IRLR2703TRLPBF 数据手册

IRLR2703TRLPBF 替代型号

与IRLR2703TRLPBF相关器件

与IRLR2703TRLPBF相关文章

您还可以找

您在本页遇到什么问题？