5秒后页面跳转
IRLR2905ZTR PDF预览

IRLR2905ZTR

更新时间: 2024-09-13 13:08:55
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
10页 136K
描述
Power Field-Effect Transistor, 42A I(D), 55V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3

IRLR2905ZTR 数据手册

 浏览型号IRLR2905ZTR的Datasheet PDF文件第2页浏览型号IRLR2905ZTR的Datasheet PDF文件第3页浏览型号IRLR2905ZTR的Datasheet PDF文件第4页浏览型号IRLR2905ZTR的Datasheet PDF文件第5页浏览型号IRLR2905ZTR的Datasheet PDF文件第6页浏览型号IRLR2905ZTR的Datasheet PDF文件第7页 
PD- 91334E  
IRLR/U2905  
HEXFET® Power MOSFET  
l Logic-Level Gate Drive  
l Ultra Low On-Resistance  
l Surface Mount (IRLR2905)  
l Straight Lead (IRLU2905)  
l Advanced Process Technology  
l Fast Switching  
D
VDSS = 55V  
RDS(on) = 0.027Ω  
G
ID = 42Aꢀ  
S
l Fully Avalanche Rated  
Description  
Fifth Generation HEXFETs from International Rectifier utilize advanced  
processing techniques to achieve the lowest possible on-resistance per  
silicon area. This benefit, combined with the fast switching speed and  
ruggedized device design that HEXFET Power MOSFETs are well known for,  
provides the designer with an extremely efficient device for use in a wide  
variety of applications.  
D-Pak  
T O -252AA  
I-Pak  
TO -251AA  
The D-PAK is designed for surface mounting using vapor phase, infrared, or  
wave soldering techniques. The straight lead version (IRFU series) is for  
through-hole mounting applications. Power dissipation levels up to 1.5 watts  
are possible in typical surface mount applications.  
Absolute Maximum Ratings  
Parameter  
Max.  
42 ꢀ  
30  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current   
A
160  
110  
0.71  
± 16  
210  
25  
PD @TC = 25°C  
PowerDissipation  
W
W/°C  
V
LinearDeratingFactor  
VGS  
EAS  
IAR  
Gate-to-SourceVoltage  
Single Pulse Avalanche Energy‚  
AvalancheCurrent  
mJ  
A
EAR  
dv/dt  
TJ  
RepetitiveAvalancheEnergy  
Peak Diode Recovery dv/dt ƒ  
OperatingJunctionand  
11  
mJ  
V/ns  
5.0  
-55 to + 175  
TSTG  
StorageTemperatureRange  
SolderingTemperature, for10seconds  
°C  
300 (1.6mm from case )  
Thermal Resistance  
Parameter  
Junction-to-Case  
Typ.  
–––  
Max.  
1.4  
50  
Units  
RθJC  
RθJA  
RθJA  
Case-to-Ambient(PCBmount)**  
Junction-to-Ambient  
–––  
°C/W  
–––  
110  
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .  
For recommended footprint and soldering techniques refer to application note #AN-994  
www.irf.com  
1
12/8/00  

与IRLR2905ZTR相关器件

型号 品牌 获取价格 描述 数据表
IRLR2905ZTRLPBF INFINEON

获取价格

Advanced Process Technology
IRLR2905ZTRPBF INFINEON

获取价格

Logic Level
IRLR2908 INFINEON

获取价格

AUTOMOTIVE MOSFET
IRLR2908PBF INFINEON

获取价格

HEXFET㈢ Power MOSFET
IRLR2908TR INFINEON

获取价格

暂无描述
IRLR2908TRL INFINEON

获取价格

暂无描述
IRLR2908TRLPBF INFINEON

获取价格

Advanced Process Technology
IRLR2908TRPBF INFINEON

获取价格

Advanced Process Technology
IRLR2908TRR INFINEON

获取价格

Power Field-Effect Transistor, 30A I(D), 80V, 0.028ohm, 1-Element, N-Channel, Silicon, Met
IRLR2908TRRPBF INFINEON

获取价格

Power Field-Effect Transistor, 30A I(D), 80V, 0.028ohm, 1-Element, N-Channel, Silicon, Met