IRLR2705

更新时间： 2024-09-12 22:23:47

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲局域网
页数	文件大小	规格书
10页	193K
描述
HEXFET POWER MOSFET

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

IRLR2705 数据手册

PD-91317C

IRLR/U2705

HEXFET^®Power MOSFET

l Logic-Level Gate Drive

l Ultra Low On-Resistance

l Surface Mount (IRLR2705)

l Straight Lead (IRLU2705)

l Advanced Process Technology

l Fast Switching

V_DSS= 55V

_DS(on)= 0.040Ω

I_D= 28Aꢀ

l Fully Avalanche Rated

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced

processing techniques to achieve the lowest possible on-resistance per

silicon area. This benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power MOSFETs are well known for,

provides the designer with an extremely efficient device for use in a wide

variety of applications.

D-Pak

TO-252AA

I-Pak

TO-251AA

The D-PAK is designed for surface mounting using vapor phase, infrared, or

wave soldering techniques. The straight lead version (IRFU series) is for

through-hole mounting applications. Power dissipation levels up to 1.5 watts

are possible in typical surface mount applications.

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

110

P_D@T_C= 25°C

PowerDissipation

W/°C

LinearDeratingFactor

0.45

± 16

110

V_GS

E_AS

I_AR

Gate-to-SourceVoltage

Single Pulse Avalanche Energy

AvalancheCurrent

E_AR

dv/dt

T_J

RepetitiveAvalancheEnergy

Peak Diode Recovery dv/dt

OperatingJunctionand

6.8

V/ns

5.0

-55 to + 175

T_STG

StorageTemperatureRange

SolderingTemperature, for10seconds

°C

300 (1.6mm from case )

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

2.2

Units

R_θJC

R_θJA

Case-to-Ambient(PCBmount)**

Junction-to-Ambient

–––

°C/W

–––

110

** When mounted on 1" square PCB (FR-4 or G-10 Material ) .

For recommended footprint and soldering techniques refer to application note #AN-994

www.irf.com

4/1/03

12 3 4 5 6 7...10

中文翻译

下载PDF

IRLR2705 替代型号

型号	品牌	替代类型	描述	数据表
IRLR2705TRPBF	INFINEON	功能相似	Power Field-Effect Transistor, 28A I(D), 55V, 0.051ohm, 1-Element, N-Channel, Silicon, Met
IRLR2705TRLPBF	INFINEON	功能相似	Power Field-Effect Transistor, 28A I(D), 55V, 0.051ohm, 1-Element, N-Channel, Silicon, Met
IRLR2705PBF	INFINEON	功能相似	HEXFET Power MOSFET

与IRLR2705相关器件

型号	品牌	获取价格	描述	数据表
IRLR2705PBF	INFINEON	获取价格	HEXFET Power MOSFET
IRLR2705TR	INFINEON	获取价格	Power Field-Effect Transistor, 28A I(D), 55V, 0.051ohm, 1-Element, N-Channel, Silicon, Met
IRLR2705TRL	INFINEON	获取价格	Power Field-Effect Transistor, 28A I(D), 55V, 0.051ohm, 1-Element, N-Channel, Silicon, Met
IRLR2705TRLPBF	INFINEON	获取价格	Power Field-Effect Transistor, 28A I(D), 55V, 0.051ohm, 1-Element, N-Channel, Silicon, Met
IRLR2705TRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 28A I(D), 55V, 0.051ohm, 1-Element, N-Channel, Silicon, Met
IRLR2705TRR	INFINEON	获取价格	Power Field-Effect Transistor, 28A I(D), 55V, 0.051ohm, 1-Element, N-Channel, Silicon, Met
IRLR2705TRRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 28A I(D), 55V, 0.051ohm, 1-Element, N-Channel, Silicon, Met
IRLR2905	INFINEON	获取价格	HEXFET Power MOSFET
IRLR2905PBF	INFINEON	获取价格	HEXFET Power MOSFET
IRLR2905TR	UMW	获取价格	种类:N-Channel;漏源电压（Vdss）:60V;持续漏极电流（Id）（在25°C时

与IRLR2705相关文章

SL74HC10N：高性能三输入与非门解析
2024-09-03

78
AIC1781A 电池充电控制器深度解析
2024-09-03

69
Pickering新高压舌簧继电器亮相汽车测试博览会
2024-08-26

100
采用MCU+MPU双处理器架构实现的创新应用设计探索
2024-08-23

114

产品中心

服务支持

精选活动

关于我们

帮助中心

IRLR2705

IRLR2705 数据手册

IRLR2705 替代型号

与IRLR2705相关器件

与IRLR2705相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IRLR2705

IRLR2705 数据手册

IRLR2705 替代型号

与IRLR2705相关器件

与IRLR2705相关文章

您还可以找

您在本页遇到什么问题？