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IRLR230A PDF预览

IRLR230A

更新时间: 2024-11-24 22:23:47
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
7页 231K
描述
ADVANCED POWER MOSFET

IRLR230A 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-252包装说明:SMALL OUTLINE, R-PSSO-G2
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.89
雪崩能效等级(Eas):37 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:200 V
最大漏极电流 (Abs) (ID):7.5 A最大漏极电流 (ID):7.5 A
最大漏源导通电阻:0.4 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-252JESD-30 代码:R-PSSO-G2
JESD-609代码:e0元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):48 W最大脉冲漏极电流 (IDM):26 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRLR230A 数据手册

 浏览型号IRLR230A的Datasheet PDF文件第2页浏览型号IRLR230A的Datasheet PDF文件第3页浏览型号IRLR230A的Datasheet PDF文件第4页浏览型号IRLR230A的Datasheet PDF文件第5页浏览型号IRLR230A的Datasheet PDF文件第6页浏览型号IRLR230A的Datasheet PDF文件第7页 
IRLR/U230A  
FEATURES  
BVDSS = 200 V  
RDS(on) = 0.4  
ID = 7.5 A  
Avalanche Rugged Technology  
Rugged Gate Oxide Technology  
Lower Input Capacitance  
Improved Gate Charge  
Extended Safe Operating Area  
D-PAK  
I-PAK  
Lower Leakage Current: 10 A (Max.) @ VDS = 200V  
µ
Lower RDS(ON): 0.335 (Typ.)  
2
1
1
2
3
3
1. Gate 2. Drain 3. Source  
Absolute Maximum Ratings  
Symbol  
Characteristic  
Value  
200  
7.5  
Units  
VDSS  
Drain-to-Source Voltage  
V
Continuous Drain Current (TC=25°C)  
Continuous Drain Current (TC=100°C)  
Drain Current-Pulsed  
ID  
A
4.7  
IDM  
VGS  
EAS  
IAR  
(1)  
26  
A
V
Gate-to-Source Voltage  
20  
±
(2)  
(1)  
(1)  
(3)  
Single Pulsed Avalanche Energy  
Avalanche Current  
37  
mJ  
A
7.5  
4.8  
5
EAR  
dv/dt  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
mJ  
V/ns  
W
*
Total Power Dissipation (TA=25°C)  
Total Power Dissipation (TC=25°C)  
Linear Derating Factor  
2.5  
48  
PD  
W
0.38  
W/°C  
Operating Junction and  
TJ , TSTG  
- 55 to +150  
300  
Storage Temperature Range  
°C  
Maximum Lead Temp. for Soldering  
Purposes, 1/8 from case for 5-seconds  
TL  
Thermal Resistance  
Symbol  
RθJC  
Characteristic  
Typ.  
Max.  
Units  
Junction-to-Case  
--  
--  
--  
2.6  
50  
RθJA  
*
Junction-to-Ambient  
Junction-to-Ambient  
°C/W  
RθJA  
110  
When mounted on the minimum pad size recommended (PCB Mount).  
*
Rev. B  
©1999 Fairchild Semiconductor Corporation  
1

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