IRLL014PBF

更新时间： 2024-10-02 03:36:39

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲光电二极管
页数	文件大小	规格书
8页	214K
描述
HEXFET Power MOSFET

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IRLL014PBF 数据手册

PD - 95387

IRLL014PbF

HEXFET^®Power MOSFET

l Surface Mount

l Available in Tape & Reel

l Dynamic dv/dt Rating

l Logic-Level Gate Drive

l R_DS(on) Specified at V_GS=4V & 5V

l Fast Switching

V_DSS= 60V

R_DS(on)= 0.20Ω

l Ease of Paralleling

l Lead-Free

I_D= 2.7A

Description

Third Generation HEXFETs from International Rectifier

provide the designer with the best combination of fast

switching, ruggedized device design, low on-resistance

andcost-effectiveness.

TheSOT-223packageisdesignedforsurface-mountusing

vapor phase, infra red, or wave soldering techniques. Its

uniquepackagedesignallowsforeasyautomaticpick-and-

place as with other SOT or SOIC packages but has the

addedadvantageofimprovedthermalperformancedueto

an enlarged tab for heatsinking. Power dissipation of

grreater than 1.25W is possible in a typical surface mount

application.

SOT-223

Absolute Maximum Ratings

Parameter

Max.

2.7

Units

I_D@ Tc = 25°C

I_D@ Tc = 100°C

I_DM

Continuous Drain Current, V_GS@ 10 V

Pulsed Drain Current

1.7

P_D@Tc = 25°C

P_D@T_A= 25°C

PowerDissipation

3.1

Power Dissipation (PCB Mount)**

LinearDeratingFactor

2.0

0.025

0.017

-/+10

100

2.7

Linear Derating Factor (PCB Mount)**

Gate-to-Source Voltage

W/°C

V_GS

E_AS

Single Pulse Avalanche Energy

Avalanche Current

I_AR

E_AR

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Junction and Storage Temperature Range

Soldewring Temperature, for 10 seconds

0.31

4.5

V/ns

dv/dt

T_J,T_STG

-55 to + 150

300 (1.6mm from case)

°C

Thermal Resistance

Parameter

Junction-to-PCB

Typ.

–––

Max.

Units

R_θJC

R_θJA

°C/W

Junction-to-Ambient.(PCBMount)**

** When mounted on 1'' SQUARE pcb (FR-4 or G-10 Material).

For recommended footprint and soldering techniques refer to application note #AN-994.

www.irf.com

06/10/04

12 3 4 5 6 7 8

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