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IRHNA593160SCS PDF预览

IRHNA593160SCS

更新时间: 2024-09-16 19:51:59
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 2229K
描述
Power Field-Effect Transistor,

IRHNA593160SCS 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:compliant风险等级:5.7
Base Number Matches:1

IRHNA593160SCS 数据手册

 浏览型号IRHNA593160SCS的Datasheet PDF文件第2页浏览型号IRHNA593160SCS的Datasheet PDF文件第3页浏览型号IRHNA593160SCS的Datasheet PDF文件第4页浏览型号IRHNA593160SCS的Datasheet PDF文件第5页浏览型号IRHNA593160SCS的Datasheet PDF文件第6页浏览型号IRHNA593160SCS的Datasheet PDF文件第7页 
PD-94493D  
IRHNA597160  
JANSR2N7550U2  
100V, P-CHANNEL  
REF: MIL-PRF-19500/713  
TECHNOLOGY  
RADIATION HARDENED  
POWER MOSFET  
SURFACE MOUNT (SMD-2)  
R
5
Product Summary  
Part Number  
IRHNA597160  
IRHNA593160  
Radiation Level  
100 kRads(Si)  
300 kRads(Si)  
RDS(on)  
0.049  
0.049  
ID  
-47A JANSR2N7550U2  
-47A JANSF2N7550U2  
QPL Part Number  
Description  
Features  
Single Event Effect (SEE) Hardened  
Ultra Low RDS(on)  
Low Total Gate Charge  
Simple Drive Requirements  
Hermetically Sealed  
Surface Mount  
IR HiRel R5 technology provides high performance power  
MOSFETs for space applications. These devices have  
been characterized for Single Event Effects (SEE) with  
useful performance up to an LET of 80 (MeV/(mg/cm2)).  
The combination of low RDS(on) and low gate charge  
reduces the power losses in switching applications such as  
DC to DC converters and motor control. These devices  
retain all of the well established advantages of MOSFETs  
such as voltage control, fast switching and temperature  
stability of electrical parameters.  
Ceramic Package  
Light Weight  
.
Absolute Maximum Ratings  
Pre-Irradiation  
Symbol  
Value  
Parameter  
Continuous Drain Current  
Continuous Drain Current  
Pulsed Drain Current  
Maximum Power Dissipation  
Units  
ID1 @ VGS = -12V, TC = 25°C  
ID2 @ VGS = -12V, TC = 100°C  
IDM @ TC = 25°C  
-47  
A
-30  
-188  
250  
2.0  
W
W/°C  
V
PD @TC = 25°C  
Linear Derating Factor  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy   
Avalanche Current   
VGS  
EAS  
IAR  
± 20  
400  
-47  
mJ  
A
mJ  
V/ns  
EAR  
dv/dt  
TJ  
Repetitive Avalanche Energy   
Peak Diode Recovery dv/dt   
Operating Junction and  
Storage Temperature Range  
Lead Temperature  
25  
-10  
-55 to + 150  
TSTG  
°C  
g
300 (for 5sec)  
3.3 (Typical)  
Weight  
For Footnotes, refer to the page 2.  
1
2019-01-15  
International Rectifier HiRel Products, Inc.  

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