IRHM7250SE

更新时间： 2024-11-11 04:23:11

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲局域网
页数	文件大小	规格书
8页	141K
描述
RADIATION HARDENED POWER MOSFET

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中文翻译

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数据手册

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IRHM7250SE 数据手册

PD - 91779A

IRHM7250SE

200V, N-CHANNEL

RADIATION HARDENED

POWER MOSFET

THRU-HOLE (TO-254AA)

RAD Hard^™HEXFET^®TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

IRHM7250SE

100K Rads (Si)

0.10Ω

26A

TO-254AA

International Rectifier’s RADHard^TMHEXFET^®MOSFET

technology provides high performance power MOSFETs

for space applications. This technology has over a de-

cade of proven performance and reliability in satellite

applications. These devices have been characterized

for both Total Dose and Single Event Effects (SEE). The

combination of low RDS(on) and low gate charge reduces

the power losses in switching applications such as DC to

DC converters and motor control. These devices retain

all of the well established advantages of MOSFETs such

as voltage control, fast switching, ease of paralleling and

temperature stability of electrical parameters.

Features:

Single Event Effect (SEE) Hardened

Ultra Low RDS(on)

Low Total Gate Charge

Proton Tolerant

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Light Weight

Pre-Irradiation

Absolute Maximum Ratings

Parameter

Units

@ V

= 12V, T = 25°C Continuous Drain Current

= 12V, T = 100°C Continuous Drain Current

Pulsed Drain Current ➀

Max. Power Dissipation

104

@ T = 25°C

150

W/°C

Linear Derating Factor

1.2

Gate-to-Source Voltage

±20

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

500

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

V/ns

dv/dt

5.9

-55 to 150

Storage Temperature Range

^oC

STG

Lead Temperature

Weight

300 (0.063 in. (1.6mm) from case for 10 sec.)

9.3 (Typical)

For footnotes refer to the last page

www.irf.com

5/15/01

12 3 4 5 6 7 8

中文翻译

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与IRHM7250SE相关器件

型号	品牌	获取价格	描述	数据表
IRHM7250SED	INFINEON	获取价格	Power Field-Effect Transistor, 26A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Me
IRHM7250SESCS	INFINEON	获取价格	200V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-254AA package - Standard
IRHM7250SEU	INFINEON	获取价格	Power Field-Effect Transistor, 26A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Me
IRHM7250U	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 26A I(D) \| TO-254VAR
IRHM7250UPBF	INFINEON	获取价格	Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Met
IRHM7254SE	INFINEON	获取价格	Power Field-Effect Transistor, 23A I(D), 250V, 0.12ohm, 1-Element, N-Channel, Silicon, Met
IRHM7254SEPBF	INFINEON	获取价格	Power Field-Effect Transistor, 23A I(D), 250V, 0.12ohm, 1-Element, N-Channel, Silicon, Met
IRHM7260	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE(T0-254AA)
IRHM7260D	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 35A I(D) \| TO-254VAR
IRHM7260SESCS	INFINEON	获取价格	Power Field-Effect Transistor, 35A I(D), 200V, 0.077ohm, 1-Element, N-Channel, Silicon, Me

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