Datasheet > IRHM7250UPBF

IRHM7250UPBF

更新时间： 2024-09-24 10:44:47

品牌	Logo	应用领域
英飞凌 - INFINEON		局域网开关脉冲晶体管
页数	文件大小	规格书
12页	271K
描述
Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN

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IRHM7250UPBF 数据手册

PD - 90674C

IRHM7250

JANSR2N7269

RADIATION HARDENED

POWER MOSFET

THRU-HOLE (TO-254AA)

200V, N-CHANNEL

REF: MIL-PRF-19500/603

RAD Hard^™HEXFET^®TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

QPL Part Number

IRHM7250

IRHM3250

IRHM4250

IRHM8250

100K Rads (Si) 0.10Ω

300K Rads (Si) 0.10Ω

600K Rads (Si) 0.10Ω

1000K Rads (Si) 0.10Ω

26A JANSR2N7269

26A JANSF2N7269

26A JANSG2N7269

26A JANSH2N7269

TO-254AA

International Rectifier’s RADHard HEXFET^®technol-

ogy provides high performance power MOSFETs for

space applications. This technology has over a de-

cade of proven performance and reliability in satellite

applications. These devices have been character-

ized for bothTotal Dose and Single Event Effects (SEE).

The combination of low Rdson and low gate charge

reduces the power losses in switching applications

such as DC to DC converters and motor control. These

devices retain all of the well established advantages

of MOSFETs such as voltage control, fast switching,

ease of paralleling and temperature stability of elec-

trical parameters.

Features:

Single Event Effect (SEE) Hardened

Low RDS(on)

Low Total Gate Charge

Proton Tolerant

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Ceramic Eyelets

Light Weight

Absolute Maximum Ratings

Pre-Irradiation

Parameter

Units

@ V

= 12V, T = 25°C

Continuous Drain Current

= 12V, T = 100°C Continuous Drain Current

104

Pulsed Drain Current ➀

Max. Power Dissipation

@ T = 25°C

150

W/°C

Linear Derating Factor

1.2

Gate-to-Source Voltage

Single Pulse Avalanche Energy ➁

Avalanche Current ➀

±20

500

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➂

Operating Junction

V/ns

dv/dt

5.0

-55 to 150

Storage Temperature Range

^oC

STG

Lead Temperature

Weight

300 (0.063 in. (1.6mm) from case for 10s)

9.3 (Typical)

For footnotes refer to the last page

www.irf.com

10/11/00

12 3 4 5 6 7...12

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与IRHM7250UPBF相关器件

型号	品牌	获取价格	描述	数据表
IRHM7254SE	INFINEON	获取价格	Power Field-Effect Transistor, 23A I(D), 250V, 0.12ohm, 1-Element, N-Channel, Silicon, Met
IRHM7254SEPBF	INFINEON	获取价格	Power Field-Effect Transistor, 23A I(D), 250V, 0.12ohm, 1-Element, N-Channel, Silicon, Met
IRHM7260	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE(T0-254AA)
IRHM7260D	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 35A I(D) \| TO-254VAR
IRHM7260SESCS	INFINEON	获取价格	Power Field-Effect Transistor, 35A I(D), 200V, 0.077ohm, 1-Element, N-Channel, Silicon, Me
IRHM7260SESCSPBF	INFINEON	获取价格	Power Field-Effect Transistor, 35A I(D), 200V, 0.077ohm, 1-Element, N-Channel, Silicon, Me
IRHM7260U	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 35A I(D) \| TO-254VAR
IRHM7264SE	INFINEON	获取价格	TRANSISTOR N-CHANNEL(BVdss=250V, Rds(on)=0.087ohm, Id=35A*)
IRHM7264SED	INFINEON	获取价格	Power Field-Effect Transistor, 31A I(D), 250V, 0.123ohm, 1-Element, N-Channel, Silicon, Me
IRHM7264SEPBF	INFINEON	获取价格	Power Field-Effect Transistor, 31A I(D), 250V, 0.123ohm, 1-Element, N-Channel, Silicon, Me

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