5秒后页面跳转
捷配首页

Datasheet > IRHM7250SED
IRHM7250SED PDF预览

IRHM7250SED

更新时间： 2024-09-23 21:14:31
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网开关脉冲晶体管
页数 文件大小 规格书
8页 129K
描述
Power Field-Effect Transistor, 26A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

阅读下载

中文翻译

获取价格

IRHM7250SED 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
包装说明：FLANGE MOUNT, S-MSFM-P3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.74
其他特性：HIGH RELIABILITY, RADIATION HARDENED雪崩能效等级（Eas）：500 mJ
外壳连接：ISOLATED配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：200 V最大漏极电流 (ID)：26 A
最大漏源导通电阻：0.105 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：S-MSFM-P3JESD-609代码：e0
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE封装主体材料：METAL
封装形状：SQUARE封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大脉冲漏极电流 (IDM)：104 A认证状态：Not Qualified
表面贴装：NO端子面层：TIN LEAD
端子形式：PIN/PEG端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

IRHM7250SED 数据手册

 浏览型号IRHM7250SED的Datasheet PDF文件第2页浏览型号IRHM7250SED的Datasheet PDF文件第3页浏览型号IRHM7250SED的Datasheet PDF文件第4页浏览型号IRHM7250SED的Datasheet PDF文件第5页浏览型号IRHM7250SED的Datasheet PDF文件第6页浏览型号IRHM7250SED的Datasheet PDF文件第7页 
PD-91779  
REPETITIVE AVALANCHE AND dv/dt RATED  
HEXFET® TRANSISTOR  
IRHM7250SE  
N-CHANNEL  
SINGLE EVENT EFFECT (SEE) RAD HARD  
Product Summary  
Part Number  
200Volt, 0.10W, (SEE) RAD HARD HEXFET  
International Rectifier’s (SEE) RAD HARD technology  
HEXFETs demonstrate immunity to SEE failure. Ad-  
ditionally, under identical pre- and post-irrradiation  
test conditions, International Rectifier’s RAD HARD  
HEXFETs retain identical electrical specifications up  
to 1 x 105 Rads (Si) total dose. No compensation in  
gate drive circuitry is required.These devices are also  
capable of surviving transient ionization pulses as high  
as 1 x 1012 Rads (Si)/Sec, and return to normal op-  
eration within a few microseconds.Since the SEE pro-  
cess utilizes International Rectifier’s patented HEXFET  
technology, the user can expect the highest quality  
and reliability in the industry.  
BVDSS  
RDS(on)  
ID  
IRHM7250SE  
200V  
0.10W  
26A  
Features:  
n
n
n
n
n
n
n
n
n
n
n
n
n
Radiation Hardened up to 1 x 105 Rads (Si)  
Single Event Burnout (SEB) Hardened  
Single Event Gate Rupture (SEGR) Hardened  
Gamma Dot (Flash X-Ray) Hardened  
Neutron Tolerant  
Identical Pre- and Post-Electrical Test Conditions  
Repetitive Avalanche Rating  
Dynamic dv/dt Rating  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
RAD HARD HEXFET transistors also feature all of  
the well-established advantages of MOSFETs, such  
as voltage control, very fast switching, ease of paral-  
leling and temperature stability of the electrical pa-  
rameters. They are well-suited for applications such  
as switching power supplies, motor controls, invert-  
ers, choppers, audio amplifiers and high-energy pulse  
circuits in space and weapons environments.  
Electrically Isolated  
Ceramic Eyelets  
Absolute Maximum Ratings  
Pre-Irradiation  
Parameter  
IRHM7250SE  
Units  
I
D
@ V  
= 12V, T = 25°C Continuous Drain Current  
26  
GS  
C
A
I
D
@ V  
= 12V, T = 100°C Continuous Drain Current  
C
16  
GS  
I
Pulsed Drain Current   
Max. Power Dissipation  
Linear Derating Factor  
Gate-to-Source Voltage  
104  
DM  
@ T = 25°C  
P
150  
W
W/°C  
V
D
C
1.2  
V
±20  
500  
GS  
E
Single Pulse Avalanche Energy ‚  
Avalanche Current   
mJ  
A
AS  
I
26  
AR  
E
Repetitive Avalanche Energy   
Peak Diode Recovery dv/dt ƒ  
Operating Junction  
15  
mJ  
V/ns  
AR  
dv/dt  
5.9  
T
-55 to 150  
J
T
Storage Temperature Range  
Lead Temperature  
oC  
STG  
300 (0.063 in. (1.6mm) from  
case for 10 sec.)  
Weight  
9.3 (typical)  
g
www.irf.com  
1
12345678

中文翻译

下载PDF

与IRHM7250SED相关器件

型号 品牌 获取价格 描述 数据表
IRHM7250SESCS INFINEON

获取价格

 		200V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-254AA package - Standard
IRHM7250SEU INFINEON

获取价格

 		Power Field-Effect Transistor, 26A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Me
IRHM7250U ETC

获取价格

 		TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 26A I(D) | TO-254VAR
IRHM7250UPBF INFINEON

获取价格

 		Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Met
IRHM7254SE INFINEON

获取价格

 		Power Field-Effect Transistor, 23A I(D), 250V, 0.12ohm, 1-Element, N-Channel, Silicon, Met
IRHM7254SEPBF INFINEON

获取价格

 		Power Field-Effect Transistor, 23A I(D), 250V, 0.12ohm, 1-Element, N-Channel, Silicon, Met
IRHM7260 INFINEON

获取价格

 		RADIATION HARDENED POWER MOSFET THRU-HOLE(T0-254AA)
IRHM7260D ETC

获取价格

 		TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 35A I(D) | TO-254VAR
IRHM7260SESCS INFINEON

获取价格

 		Power Field-Effect Transistor, 35A I(D), 200V, 0.077ohm, 1-Element, N-Channel, Silicon, Me
IRHM7260SESCSPBF INFINEON

获取价格

 		Power Field-Effect Transistor, 35A I(D), 200V, 0.077ohm, 1-Element, N-Channel, Silicon, Me

与IRHM7250SED相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证