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IRG4PC60F PDF预览

IRG4PC60F

更新时间: 2024-09-26 22:48:07
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管
页数 文件大小 规格书
8页 120K
描述
INSULATED GATE BIPOLAR TRANSISTOR

IRG4PC60F 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:TO-3P, 3 PINReach Compliance Code:compliant
风险等级:5.06其他特性:FAST
外壳连接:COLLECTOR最大集电极电流 (IC):90 A
集电极-发射极最大电压:600 V配置:SINGLE
JEDEC-95代码:TO-247ACJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:POWER CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):770 ns标称接通时间 (ton):105 ns
Base Number Matches:1

IRG4PC60F 数据手册

 浏览型号IRG4PC60F的Datasheet PDF文件第2页浏览型号IRG4PC60F的Datasheet PDF文件第3页浏览型号IRG4PC60F的Datasheet PDF文件第4页浏览型号IRG4PC60F的Datasheet PDF文件第5页浏览型号IRG4PC60F的Datasheet PDF文件第6页浏览型号IRG4PC60F的Datasheet PDF文件第7页 
PD - 94442  
IRG4PC60F  
Fast Speed IGBT  
INSULATED GATE BIPOLAR TRANSISTOR  
C
Features  
• Fast: Optimized for medium operating  
frequencies ( 1-5 kHz in hard switching, >20  
kHz in resonant mode).  
VCES =600V  
• Generation 4 IGBT design provides tighter  
parameter distribution and higher efficiency.  
• Industry standard TO-247AC package.  
VCE(on)typ. = 1.50V  
G
@VGE = 15V, IC = 60A  
E
n-channel  
Benefits  
• Generation 4 IGBT's offer highest efficiency available  
• IGBT's optimized for specified application conditions  
• Designed for best performance when used with  
IR Hexfred & IR Fred companion diodes.  
TO-247AC  
Absolute Maximum Ratings  
Parameter  
Max.  
600  
Units  
V
VCES  
Collector-to-Emitter Breakdown Voltage  
Continuous Collector Current  
Continuous Collector Current  
Pulsed Collector Current   
IC @ TC = 25°C  
90  
IC @ TC = 100°C  
60  
A
ICM  
120  
ILM  
Clamped Inductive Load Current ‚  
Gate-to-Emitter Voltage  
120  
VGE  
± 20  
V
EARV  
Reverse Voltage Avalanche Energy ƒ  
Maximum Power Dissipation  
200  
mJ  
PD @ TC = 25°C  
520  
W
°C  
PD @ TC = 100°C  
Maximum Power Dissipation  
210  
TJ  
Operating Junction and  
-55 to + 150  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
Mounting torque, 6-32 or M3 screw.  
300 (0.063 in. (1.6mm from case )  
10 lbf•in (1.1N•m)  
Thermal Resistance  
Parameter  
Junction-to-Case  
Typ.  
–––  
Max.  
0.24  
–––  
40  
Units  
°C/W  
RθJC  
RθCS  
RθJA  
Wt  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient, typical socket mount  
Weight  
0.24  
–––  
6 (0.21)  
–––  
g (oz)  
www.irf.com  
1
04/26/02  

IRG4PC60F 替代型号

型号 品牌 替代类型 描述 数据表
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Fit Rate / Equivalent Device Hours