Datasheet > 晶体管 > IGBT> IRG4BC40F

IRG4BC40F

更新时间： 2024-11-20 22:48:07

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管开关功率控制双极性晶体管栅局域网
页数	文件大小	规格书
8页	169K
描述
INSULATED GATE BIPOLAR TRANSISOR(Vces=600V, Vce(on)typ.=1.50V, @Vge=15V, Ic=27A)

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中文翻译

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数据手册
替代型号

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IRG4BC40F 数据手册

PD - 91454B

IRG4BC40F

Fast Speed IGBT

INSULATED GATE BIPOLAR TRANSISTOR

Features

• Fast: optimized for medium operating

frequencies ( 1-5 kHz in hard switching, >20

kHz in resonant mode).

V_CES=600V

• Generation 4 IGBT design provides tighter

parameter distribution and higher efficiency than

Generation 3

V_{CE(on) typ.}= 1.50V

@V_GE= 15V, I_C= 27A

• Industry standard TO-220AB package

n-channel

Benefits

• Generation 4 IGBTs offer highest efficiency available

• IGBTs optimized for specified application conditions

• Designed to be a "drop-in" replacement for equivalent

industry-standard Generation 3 IR IGBTs

TO-220AB

Absolute Maximum Ratings

Parameter

Max.

Units

V_CES

Collector-to-Emitter Breakdown Voltage

Continuous Collector Current

Pulsed Collector Current

600

I_C@ T_C= 25°C

I_C@ T_C= 100°C

I_CM

200

I_LM

Clamped Inductive Load Current

Gate-to-Emitter Voltage

200

V_GE

E_ARV

Reverse Voltage Avalanche Energy

Maximum Power Dissipation

160

P_D@ T_C= 25°C

P_D@ T_C= 100°C

Maximum Power Dissipation

T_J

Operating Junction and

-55 to + 150

T_STG

Storage Temperature Range

°C

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw.

300 (0.063 in. (1.6mm from case )

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

0.77

–––

Units

°C/W

g (oz)

R_θJC

R_θCS

R_θJA

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient, typical socket mount

Weight

0.50

–––

2.0 (0.07)

–––

www.irf.com

4/17/2000

12 3 4 5 6 7 8

中文翻译

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IRG4BC40F 替代型号

型号	品牌	替代类型	描述	数据表
IRG4BC40FPBF	INFINEON	完全替代	Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT

与IRG4BC40F相关器件

型号	品牌	获取价格	描述	数据表
IRG4BC40FD	INFINEON	获取价格	Fit Rate / Equivalent Device Hours
IRG4BC40FPBF	INFINEON	获取价格	Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT
IRG4BC40K	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.1V, @Vge=15V, Ic=25A)
IRG4BC40KD	INFINEON	获取价格	Fit Rate / Equivalent Device Hours
IRG4BC40KPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC40MD	INFINEON	获取价格	Fit Rate / Equivalent Device Hours
IRG4BC40S	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.32V, @Vge=1
IRG4BC40SD	INFINEON	获取价格	Fit Rate / Equivalent Device Hours
IRG4BC40SPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT
IRG4BC40U	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.72V, @Vge=15V, Ic=20A)