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IRG4BC40KPBF PDF预览

IRG4BC40KPBF

更新时间: 2024-09-27 04:44:35
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管电动机控制双极性晶体管局域网
页数 文件大小 规格书
8页 574K
描述
INSULATED GATE BIPOLAR TRANSISTOR

IRG4BC40KPBF 技术参数

是否Rohs认证:符合生命周期:End Of Life
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.79
Is Samacsys:N其他特性:ULTRA FAST
外壳连接:COLLECTOR最大集电极电流 (IC):42 A
集电极-发射极最大电压:600 V配置:SINGLE
最大降落时间(tf):210 ns门极发射器阈值电压最大值:6 V
门极-发射极最大电压:20 VJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):160 W
认证状态:Not Qualified子类别:Insulated Gate BIP Transistors
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:MOTOR CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):340 ns标称接通时间 (ton):48 ns
Base Number Matches:1

IRG4BC40KPBF 数据手册

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PD -95174  
IRG4BC40KPbF  
Short Circuit Rated  
UltraFastIGBT  
INSULATEDGATEBIPOLARTRANSISTOR  
C
Features  
VCES = 600V  
• Short Circuit Rated UltraFast: optimized for high  
operating frequencies >5.0 kHz , and Short Circuit  
Rated to 10µs @ 125°C, VGE = 15V  
• Generation 4 IGBT design provides higher efficiency  
than Generation 3  
V
CE(on) typ. = 2.1V  
G
@VGE = 15V, IC = 25A  
E
• Industry standard TO-247AC package  
• Lead-Free  
n-channel  
Benefits  
• Generation 4 IGBTs offer highest efficiency available  
• IGBTs optimized for specified application conditions  
TO-220AB  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
VCES  
Collector-to-Emitter Voltage  
Continuous Collector Current  
Continuous Collector Current  
Pulsed Collector Current   
Clamped Inductive Load Current ‚  
Short Circuit Withstand Time  
Gate-to-Emitter Voltage  
600  
V
IC @ TC = 25°C  
42  
IC @ TC = 100°C  
25  
A
ICM  
84  
ILM  
84  
tsc  
10  
±20  
µs  
V
VGE  
EARV  
Reverse Voltage Avalanche Energy ƒ  
Maximum Power Dissipation  
15  
mJ  
W
PD @ TC = 25°C  
160  
PD @ TC = 100°C Maximum Power Dissipation  
65  
TJ  
Operating Junction and  
-55 to +150  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 sec.  
Mounting torque, 6-32 or M3 screw.  
°C  
300 (0.063 in. (1.6mm) from case)  
10 lbf•in (1.1N•m)  
Thermal Resistance  
Parameter  
Junction-to-Case  
Typ.  
–––  
Max.  
0.77  
–––  
80  
Units  
°C/W  
g (oz)  
RθJC  
RθCS  
RθJA  
Wt  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient, typical socket mount  
Weight  
0.50  
–––  
2 (0.07)  
–––  
www.irf.com  
1
04/23/04  

IRG4BC40KPBF 替代型号

型号 品牌 替代类型 描述 数据表
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