IRFZ34

更新时间： 2024-11-28 05:39:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	1501K
描述
Power MOSFET

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

IRFZ34 数据手册

IRFZ34, SiHFZ34

Vishay Siliconix

Power MOSFET

FEATURES

• Dynamic dV/dt Rating

PRODUCT SUMMARY

V_DS(V)

Available

• 175 °C Operating Temperature

• Fast Switching

_DS(on)(Ω)

V_GS= 10 V

0.050

RoHS*

Q_g(Max.) (nC)

COMPLIANT

• Ease of Paralleling

_gs(nC)

_gd(nC)

• Simple Drive Requirements

• Lead (Pb)-free Available

Configuration

Single

DESCRIPTION

TO-220

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation

levels to approximately 50 W. The low thermal resistance

and low package cost of the TO-220 contribute to its wide

acceptance throughout the industry.

N-Channel MOSFET

ORDERING INFORMATION

Package

TO-220

IRFZ34PbF

SiHFZ34-E3

IRFZ34

Lead (Pb)-free

SnPb

SiHFZ34

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

V_DS

Gate-Source Voltage

V_GS

T_C= 25 °C

T_C=100°C

Continuous Drain Current

V_GSat 10 V

I_D

Pulsed Drain Current^a

I_DM

120

Linear Derating Factor

0.59

200

W/°C

Single Pulse Avalanche Energy^b

Maximum Power Dissipation

E_AS

P_D

_C= 25 °C

Peak Diode Recovery dV/dt^c

dV/dt

T_J, T_stg

4.5

V/ns

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

- 55 to + 175

300^d

°C

for 10 s

6-32 or M3 screw

lbf · in

N · m

Mounting Torque

1.1

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 25 V, starting T_J= 25 °C, L = 259 µH, R_G= 25 Ω, I_AS= 30 A (see fig. 12).

c. I_SD≤ 30 A, dI/dt ≤ 200 A/µs, V_DD≤ V_DS, T_J≤ 175 °C.

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91290

S-81366-Rev. A, 07-Jul-08

www.vishay.com

12 3 4 5 6 7 8

中文翻译

下载PDF

IRFZ34 替代型号

型号	品牌	替代类型	描述	数据表
IRFZ34PBF	VISHAY	完全替代	Power MOSFET

与IRFZ34相关器件

型号	品牌	获取价格	描述	数据表
IRFZ34_11	VISHAY	获取价格	Power MOSFET
IRFZ34-001	INFINEON	获取价格	Power Field-Effect Transistor, 30A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Meta
IRFZ34-002	INFINEON	获取价格	Power Field-Effect Transistor, 30A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Meta
IRFZ34-003	INFINEON	获取价格	Power Field-Effect Transistor, 30A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Meta
IRFZ34-003PBF	INFINEON	获取价格	Power Field-Effect Transistor, 30A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Meta
IRFZ34-006	INFINEON	获取价格	Power Field-Effect Transistor, 30A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Meta
IRFZ34-009	INFINEON	获取价格	Power Field-Effect Transistor, 30A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Meta
IRFZ34-010	INFINEON	获取价格	Power Field-Effect Transistor, 30A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Meta
IRFZ34-010PBF	INFINEON	获取价格	Power Field-Effect Transistor, 30A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Meta
IRFZ34-011PBF	INFINEON	获取价格	Power Field-Effect Transistor, 30A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Meta

与IRFZ34相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

47
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

37
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

65
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

61

产品中心

服务支持

精选活动

关于我们

帮助中心

IRFZ34

IRFZ34 数据手册

IRFZ34 替代型号

与IRFZ34相关器件

与IRFZ34相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IRFZ34

IRFZ34 数据手册

IRFZ34 替代型号

与IRFZ34相关器件

与IRFZ34相关文章

您还可以找

您在本页遇到什么问题？