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IRFZ34_11 PDF预览

IRFZ34_11

更新时间: 2024-11-01 11:09:55
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
9页 1562K
描述
Power MOSFET

IRFZ34_11 数据手册

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IRFZ34, SiHFZ34  
Vishay Siliconix  
Power MOSFET  
FEATURES  
• Dynamic dV/dt Rating  
PRODUCT SUMMARY  
VDS (V)  
60  
Available  
• 175 °C Operating Temperature  
• Fast Switching  
R
DS(on) (Ω)  
VGS = 10 V  
0.050  
RoHS*  
Qg (Max.) (nC)  
46  
11  
COMPLIANT  
• Ease of Paralleling  
Q
Q
gs (nC)  
gd (nC)  
• Simple Drive Requirements  
• Compliant to RoHS Directive 2002/95/EC  
22  
Configuration  
Single  
D
DESCRIPTION  
Third generation Power MOSFETs from Vishay provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and  
cost-effectiveness.  
TO-220AB  
G
The TO-220AB package is universally preferred for all  
commercial-industrial applications at power dissipation  
levels to approximately 50 W. The low thermal resistance  
and low package cost of the TO-220AB contribute to its  
wide acceptance throughout the industry.  
S
S
N-Channel MOSFET  
D
G
ORDERING INFORMATION  
Package  
TO-220AB  
IRFZ34PbF  
SiHFZ34-E3  
IRFZ34  
Lead (Pb)-free  
SnPb  
SiHFZ34  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
UNIT  
Drain-Source Voltage  
VDS  
60  
V
Gate-Source Voltage  
VGS  
20  
TC = 25 °C  
TC = 100 °C  
30  
21  
Continuous Drain Current  
VGS at 10 V  
ID  
A
Pulsed Drain Currenta  
IDM  
120  
Linear Derating Factor  
0.59  
200  
W/°C  
mJ  
Single Pulse Avalanche Energyb  
Maximum Power Dissipation  
EAS  
PD  
TC = 25 °C  
88  
W
Peak Diode Recovery dV/dtc  
dV/dt  
TJ, Tstg  
4.5  
V/ns  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)  
- 55 to + 175  
300d  
10  
°C  
for 10 s  
6-32 or M3 screw  
lbf · in  
N · m  
Mounting Torque  
1.1  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).  
b. VDD = 25 V, starting TJ = 25 °C, L = 259 μH, Rg = 25 Ω, IAS = 30 A (see fig. 12).  
c. ISD 30 A, dI/dt 200 A/μs, VDD VDS, TJ 175 °C.  
d. 1.6 mm from case.  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 91290  
S11-0517-Rev. B, 21-Mar-11  
www.vishay.com  
1
This datasheet is subject to change without notice.  
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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