5秒后页面跳转
IRFZ34AJ69Z PDF预览

IRFZ34AJ69Z

更新时间: 2024-11-21 20:10:43
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 局域网开关脉冲晶体管
页数 文件大小 规格书
7页 228K
描述
Power Field-Effect Transistor, 30A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 3 PIN

IRFZ34AJ69Z 技术参数

生命周期:Obsolete零件包装代码:SFM
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.58雪崩能效等级(Eas):463 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (ID):30 A最大漏源导通电阻:0.04 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):120 A
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRFZ34AJ69Z 数据手册

 浏览型号IRFZ34AJ69Z的Datasheet PDF文件第2页浏览型号IRFZ34AJ69Z的Datasheet PDF文件第3页浏览型号IRFZ34AJ69Z的Datasheet PDF文件第4页浏览型号IRFZ34AJ69Z的Datasheet PDF文件第5页浏览型号IRFZ34AJ69Z的Datasheet PDF文件第6页浏览型号IRFZ34AJ69Z的Datasheet PDF文件第7页 
IRFZ34A  
FEATURES  
BVDSS = 60 V  
RDS(on) = 0.04  
ID = 30 A  
Avalanche Rugged Technology  
Rugged Gate Oxide Technology  
Lower Input Capacitance  
Improved Gate Charge  
Extended Safe Operating Area  
TO-220  
175 C Operating Temperature  
°
Lower Leakage Current: 10 A (Max.) @ VDS = 60V  
µ
Lower RDS(ON): 0.030 (Typ.)  
1
2
3
1.Gate 2. Drain 3. Source  
Absolute Maximum Ratings  
Symbol  
Characteristic  
Value  
60  
Units  
VDSS  
Drain-to-Source Voltage  
V
Continuous Drain Current (TC=25°C)  
Continuous Drain Current (TC=100°C)  
Drain Current-Pulsed  
30  
ID  
A
21.2  
120  
IDM  
VGS  
EAS  
IAR  
(1)  
A
V
Gate-to-Source Voltage  
20  
±
(2)  
(1)  
(1)  
(3)  
Single Pulsed Avalanche Energy  
Avalanche Current  
463  
30  
mJ  
A
EAR  
dv/dt  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
Total Power Dissipation (TC=25°C)  
Linear Derating Factor  
7.7  
5.5  
77  
mJ  
V/ns  
W
PD  
TJ , TSTG  
TL  
0.52  
W/°C  
Operating Junction and  
- 55 to +175  
300  
Storage Temperature Range  
Maximum Lead Temp. for Soldering  
°C  
Purposes, 1/8 from case for 5-seconds  
Thermal Resistance  
Symbol  
RθJC  
Characteristic  
Junction-to-Case  
Case-to-Sink  
Typ.  
Max.  
1.94  
--  
Units  
--  
0.5  
--  
RθCS  
°C/W  
RθJA  
62.5  
Junction-to-Ambient  
Rev. B  
©1999 Fairchild Semiconductor Corporation  

与IRFZ34AJ69Z相关器件

型号 品牌 获取价格 描述 数据表
IRFZ34E INFINEON

获取价格

HEXFET POWER MOSFET
IRFZ34EPBF INFINEON

获取价格

HEXFET㈢ Power MOSFET
IRFZ34F INFINEON

获取价格

Power Field-Effect Transistor, 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se
IRFZ34FX INFINEON

获取价格

Power Field-Effect Transistor, 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se
IRFZ34L INFINEON

获取价格

HEXFET Power MOSFET
IRFZ34L VISHAY

获取价格

Power MOSFET
IRFZ34LPBF VISHAY

获取价格

Power MOSFET
IRFZ34N INFINEON

获取价格

Power MOSFET(Vdss=55V, Rds(on)=0.040ohm, Id=26A)
IRFZ34NL INFINEON

获取价格

HEXFET? Power MOSFET
IRFZ34NLPBF INFINEON

获取价格

HEXFET Power MOSFET