IRFR5305HR

更新时间： 2024-02-18 15:51:40

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲
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IRFR5305HR 数据手册

PD - 91402A

IRFR/U5305

HEXFET^®Power MOSFET

l Ultra Low On-Resistance

l Surface Mount (IRFR5305)

l Straight Lead (IRFU5305)

l Advanced Process Technology

l FastSwitching

V_DSS= -55V

R_DS(on)= 0.065Ω

I_D= -31A

l Fully Avalanche Rated

Description

FifthGenerationHEXFETsfromInternationalRectifierutilize

advanced processing techniques to achieve extremely low

on-resistance per silicon area. This benefit, combined with

the fast switching speed and ruggedized device design that

HEXFET^®Power MOSFETs are well known for, provides

the designer with an extremely efficient and reliable device

for use in a wide variety of applications.

The D-Pak is designed for surface mounting using vapor

phase, infrared, or wave soldering techniques. The straight

lead version (IRFU series) is for through-hole mounting

applications. Power dissipation levels up to 1.5 watts are

possible in typical surface mount applications.

D-Pak

IRFR5305

I-Pak

IRFU5305

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ -10V

Pulsed Drain Current

-31

-22

-110

110

0.71

± 20

280

-16

P_D@T_C= 25°C

PowerDissipation

W/°C

LinearDeratingFactor

V_GS

E_AS

I_AR

Gate-to-SourceVoltage

Single Pulse Avalanche Energy

AvalancheCurrent

E_AR

dv/dt

T_J

RepetitiveAvalancheEnergy

Peak Diode Recovery dv/dt

OperatingJunctionand

V/ns

-5.0

-55 to + 175

T_STG

StorageTemperatureRange

SolderingTemperature,for10seconds

Mounting torque, 6-32 or M3 srew

°C

300 (1.6mm from case )

10 lbf•in (1.1N•m)

ThermalResistance

Parameter

Junction-to-Case

Typ.

–––

Max.

1.4

Units

R_θJC

R_θJA

Junction-to-Ambient(PCBmount)*

Junction-to-Ambient**

–––

°C/W

–––

110

10/23/00

12 3 4 5 6 7...10

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与IRFR5305HR相关器件

型号	品牌	获取价格	描述	数据表
IRFR5305PBF	INFINEON	获取价格	HEXFET㈢ Power MOSFET ( VDSS = -55V , RDS(on)
IRFR5305PBF	KERSEMI	获取价格	Ultra Low On-Resistance
IRFR5305TR	UMW	获取价格	种类:P-Channel;漏源电压（Vdss）:-60V;持续漏极电流（Id）（在25°C
IRFR5305TRL	INFINEON	获取价格	Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Met
IRFR5305TRLPBF	INFINEON	获取价格	Ultra Low On-Resistance
IRFR5305TRPBF	KERSEMI	获取价格	Ultra Low On-Resistance
IRFR5305TRPBF	INFINEON	获取价格	HEXFETÂ® Power MOSFET
IRFR5305TRR	INFINEON	获取价格	Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Met
IRFR5305TRRPBF	INFINEON	获取价格	暂无描述
IRFR540Z	FREESCALE	获取价格	HEXFETÂ® Power MOSFET