Datasheet > IRFR5305TR

IRFR5305TR

更新时间： 2024-11-25 17:15:19

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
6页	1440K
描述
种类:P-Channel;漏源电压（Vdss）:-60V;持续漏极电流（Id）（在25°C时）:-30A;Vgs(th)(V):±20;漏源导通电阻:40mΩ@-10V

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IRFR5305TR 数据手册

UMW

IRFR5305

Channel Enhancement Mode MOSFET

-60 V P-

DESCRIPTION

The

uses advanced trench

IRFR5305TR

technology to provide excellent R

and low

DS(ON)

gate charge .This device is suitable for use as a

load switch or in PWM applications.

GENERAL FEATURES

V_DS=- 60V,I_D=-30A

ꢀ

R_DS(ON)< 40mΩ @ V_GS=-10V

ꢀ

R_DS(ON)< 55mΩ @ V_GS=-4.5V

ꢀ

High Power and current handing capability

ꢀ

Lead free product is acquired

ꢀ

Surface Mount Package

Application

PWM applications

ꢀ

Load switch

ꢀ

Power management

ABSOLUTE MAXIMUM RATINGS(TA=25

℃unless otherwise noted)

Parameter

Symbol

Limit

-60

Unit

Drain-Source Voltage

Gate-Source Voltage

VDS

VGS

±20

-30

I_D(25℃)

I_D(70℃)

-20

Drain Current-Continuous@ Current-Pulsed (Note 1)

-60

IDM

P_D

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

Thermal Resistance,Junction-to-Ambient (Note 2)

TJ,TSTG

-55 To 175

℃

RθJA

℃/W

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6

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