Datasheet > IRFR3710ZTRL

IRFR3710ZTRL

更新时间： 2024-09-14 12:08:39

品牌	Logo	应用领域
科盛美 - KERSEMI		晶体晶体管开关脉冲
页数	文件大小	规格书
12页	4703K
描述
HEXFET Power MOSFET

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中文翻译

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数据手册

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IRFR3710ZTRL 数据手册

IRFR3710ZPbF

IRFU3710ZPbF

IRFU3710Z-701PbF

Features

HEXFET^®Power MOSFET

Advanced Process Technology

UltraLowOn-Resistance

175°COperatingTemperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Multiple Package Options

Lead-Free

V_DSS= 100V

R_DS(on)= 18mΩ

I_D= 42A

Description

This HEXFET^®Power MOSFET utilizes the

latestprocessingtechniquestoachieveextremely

low on-resistance per silicon area. Additional

features of this design are a 175°C junction

operatingtemperature,fastswitchingspeedand

improved repetitive avalanche rating . These

featurescombinetomakethisdesignanextremely

efficient and reliable device for use in a wide

variety of applications.

D-Pak

IRFR3710ZPbF

I-Pak

IRFU3710ZPbF

I-Pak Leadform 701

IRFU3710Z-701PbF

Refer to page 11 for package outline

Absolute Maximum Ratings

Max.

Parameter

Units

(Silicon Limited)

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T = 25°C

@ T = 100°C

(Package Limited)

@ T = 25°C

220

140

@T = 25°C Power Dissipation

W/°C

0.95

Linear Derating Factor

± 20

Gate-to-Source Voltage

Single Pulse Avalanche Energy

E_{AS (Thermally limited)}

150

200

E_AS(Tested )

Single Pulse Avalanche Energy Tested Value

Avalanche Current

I_AR

See Fig.12a, 12b, 15, 16

E_AR

Repetitive Avalanche Energy

Operating Junction and

-55 to + 175

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

STG

300 (1.6mm from case )

Thermal Resistance

Parameter

Typ.

–––

Max.

1.05

Units

R_θJC

R_θJA

Junction-to-Case

Junction-to-Ambient (PCB mount)

Junction-to-Ambient

°C/W

110

www.kersemi.com

12 3 4 5 6 7...12

中文翻译

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