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IRFR3711PBF PDF预览

IRFR3711PBF

更新时间: 2024-11-20 04:18:51
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
11页 233K
描述
HEXFET Power MOSFET

IRFR3711PBF 数据手册

 浏览型号IRFR3711PBF的Datasheet PDF文件第2页浏览型号IRFR3711PBF的Datasheet PDF文件第3页浏览型号IRFR3711PBF的Datasheet PDF文件第4页浏览型号IRFR3711PBF的Datasheet PDF文件第5页浏览型号IRFR3711PBF的Datasheet PDF文件第6页浏览型号IRFR3711PBF的Datasheet PDF文件第7页 
PD-95073A  
IRFR3711PbF  
IRFU3711PbF  
SMPS MOSFET  
HEXFET® Power MOSFET  
Applications  
l High Frequency Isolated DC-DC  
Converters with Synchronous Rectification  
for Telecom and Industrial Use  
l High Frequency Buck Converters for  
Server Processor Power Synchronous FET  
l Optimized for Synchronous Buck  
Converters Including Capacitive Induced  
Turn-on Immunity  
VDSS  
20V  
RDS(on) max  
ID  
110A  
„
6.5mΩ  
l 100% RG Tested  
l Lead-Free  
D-Pak  
IRFR3711  
I-Pak  
IRFU3711  
Benefits  
l Ultra-Low Gate Impedance  
l Very Low RDS(on) at 4.5V VGS  
l Fully Characterized Avalanche Voltage  
and Current  
Absolute Maximum Ratings  
Max  
Symbol  
Parameter  
Units  
VDS  
VGS  
Drain-Source Voltage  
20  
V
Gate-Source Voltage  
± 20  
100  
Continuous Drain Current, VGS @ 10V  
I
I
I
@ T = 25°C  
C
D
D
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
69  
@ T = 100°C  
A
C
440  
2.5  
120  
DM  
Maximum Power Dissipation  
P
P
@TA = 25°C  
W
D
D
@T = 25°C Maximum Power Dissipation  
C
Linear Derating Factor  
0.96  
W/°C  
°C  
TJ, T  
Junction and Storage Temperature Range  
-55 to +150  
STG  
Thermal Resistance  
Symbol  
Parameter  
Junction-to-Case  
Typ  
Max  
1.04  
50  
Units  
RθJC  
RθJA  
RθJA  
–––  
–––  
–––  
Junction-to-Ambient (PCB Mount)  
Junction-to-Ambient  
°C/W  
110  
Notes  through † are on page 10  
www.irf.com  
1
1/7/05  

IRFR3711PBF 替代型号

型号 品牌 替代类型 描述 数据表
IRFR3711TRLPBF INFINEON

完全替代

Power Field-Effect Transistor, 30A I(D), 20V, 0.0065ohm, 1-Element, N-Channel, Silicon, Me
IRFR3711TRPBF INFINEON

完全替代

Power Field-Effect Transistor, 30A I(D), 20V, 0.0065ohm, 1-Element, N-Channel, Silicon, Me

与IRFR3711PBF相关器件

型号 品牌 获取价格 描述 数据表
IRFR3711TR INFINEON

获取价格

TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 110A I(D) | TO-252AA
IRFR3711TRL INFINEON

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TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 110A I(D) | TO-252AA
IRFR3711TRLPBF INFINEON

获取价格

Power Field-Effect Transistor, 30A I(D), 20V, 0.0065ohm, 1-Element, N-Channel, Silicon, Me
IRFR3711TRPBF INFINEON

获取价格

Power Field-Effect Transistor, 30A I(D), 20V, 0.0065ohm, 1-Element, N-Channel, Silicon, Me
IRFR3711TRR INFINEON

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TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 110A I(D) | TO-252AA
IRFR3711TRRPBF INFINEON

获取价格

Power Field-Effect Transistor, 30A I(D), 20V, 0.0065ohm, 1-Element, N-Channel, Silicon, Me
IRFR3711Z INFINEON

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HEXFET Power MOSFET
IRFR3711Z KERSEMI

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High Frequency Synchronous Buck Converters for Computer Processor Power
IRFR3711ZCPBF KERSEMI

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High Frequency Synchronous Buck Converters for Computer Processor Power
IRFR3711ZCPBF INFINEON

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HEXFET Power MOSFET