Datasheet > IRFM224BTF_FP001

IRFM224BTF_FP001

更新时间： 2024-11-17 06:59:15

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
8页	705K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

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技术参数
数据手册

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IRFM224BTF_FP001 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
Reach Compliance Code：	compliant	风险等级：	5.92
配置：	Single	最大漏极电流 (Abs) (ID)：	0.92 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JESD-609代码：	e0
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	2.5 W
子类别：	FET General Purpose Power	表面贴装：	YES
端子面层：	Tin/Lead (Sn/Pb)	Base Number Matches：	1

IRFM224BTF_FP001 数据手册

November 2001

IRFM224B

250V N-Channel MOSFET

General Description

Features

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switching DC/DC converters and

switch mode power supplies.

•

0.92A, 250V, R

= 1.1Ω @V = 10 V

DS(on) GS

Low gate charge ( typical 13.5 nC)

Low Crss ( typical 9.5 pF)

Fast switching

Improved dv/dt capability

! "

SOT-223

IRFM Series

Absolute Maximum Ratings

T = 25°C unless otherwise noted

Symbol

Parameter

IRFM224B

250

Units

Drain-Source Voltage

DSS

- Continuous (T = 25°C)

Drain Current

0.92

- Continuous (T = 70°C)

0.74

(Note 1)

Drain Current

- Pulsed

7.0

Gate-Source Voltage

± 30

GSS

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

0.92

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

0.25

V/ns

dv/dt

5.5

Power Dissipation (T = 25°C)

2.5

- Derate above 25°C

Operating and Storage Temperature Range

0.02

W/°C

°C

T , T

-55 to +150

STG

Maximum lead temperature for soldering purposes,

300

°C

1/8" from case for 5 seconds

Thermal Characteristics

Symbol

Parameter

Typ

Max

Units

Thermal Resistance, Junction-to-Ambient *

°C/W

θJA

* When mounted on the minimum pad size recommended (PCB Mount)

Rev. B, November 2001

12 3 4 5 6 7 8

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