IRFM240PBF

更新时间： 2024-01-05 16:29:39

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管
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8页	191K
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IRFM240PBF 数据手册

PD - 90555D

IRFM240

JANTX2N7219

JANTXV2N7219

POWER MOSFET

THRU-HOLE (TO-254AA)

REF:MIL-PRF-19500/596

200V, N-CHANNEL

HEXFET^®MOSFETTECHNOLOGY

Product Summary

Part Number

RDS(on)

IRFM240

0.18 Ω

18A

HEXFET^®MOSFET technology is the key to International

Rectifier’s advanced line of power MOSFET transistors. The

efficient geometry design achieves very low on-state re-

sistance combined with high transconductance. HEXFET

transistors also feature all of the well-established advan-

tages of MOSFETs, such as voltage control, very fast switch-

ing, ease of paralleling and electrical parameter temperature

stability. They are well-suited for applications such as switch-

ing power supplies, motor controls, inverters, choppers,

audio amplifiers, high energy pulse circuits, and virtually

any application where high reliability is required. The

HEXFET transistor’s totally isolated package eliminates the

need for additional isolating material between the device

and the heatsink. This improves thermal efficiency and

reduces drain capacitance.

TO-254AA

Features:

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Electrically Isolated

Dynamic dv/dt Rating

n Light-weight

Absolute Maximum Ratings

Parameter

Units

@ V

= 10V, T = 25°C

Continuous Drain Current

= 10V, T = 100°C Continuous Drain Current

Pulsed Drain Current ➀

Max. Power Dissipation

@ T = 25°C

125

1.0

±20

450

W/°C

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

12.5

5.0

V/ns

dv/dt

-55 to 150

Storage Temperature Range

^oC

STG

300 ( 0.063 in.(1.6mm) from case for 10s)

2.6 (Typical)

Lead Temperature

Weight

For footnotes refer to the last page

www.irf.com

1/29/02

12 3 4 5 6 7 8

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