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IRFM260SCV PDF预览

IRFM260SCV

更新时间: 2024-11-06 14:56:23
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
7页 184K
描述
200V Single N-Channel Hi-Rel MOSFET in a TO-254AA package - Screening Level TXV

IRFM260SCV 技术参数

生命周期:Active包装说明:FLANGE MOUNT, S-XSFM-P3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.65其他特性:HIGH RELIABILITY
雪崩能效等级(Eas):700 mJ外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:200 V
最大漏极电流 (ID):35 A最大漏源导通电阻:0.068 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-254AA
JESD-30 代码:S-XSFM-P3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:UNSPECIFIED封装形状:SQUARE
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):140 A表面贴装:NO
端子形式:PIN/PEG端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRFM260SCV 数据手册

 浏览型号IRFM260SCV的Datasheet PDF文件第2页浏览型号IRFM260SCV的Datasheet PDF文件第3页浏览型号IRFM260SCV的Datasheet PDF文件第4页浏览型号IRFM260SCV的Datasheet PDF文件第5页浏览型号IRFM260SCV的Datasheet PDF文件第6页浏览型号IRFM260SCV的Datasheet PDF文件第7页 
PD - 91388C  
IRFM260  
200V, N-CHANNEL  
POWER MOSFET  
THRU-HOLE (TO-254AA)  
HEXFET® MOSFET TECHNOLOGY  
Product Summary  
Part Number  
RDS(on)  
ID  
IRFM260  
0.060 Ω  
35A*  
HEXFET® MOSFET technology is the key to International  
Rectifier’s advanced line of power MOSFET transistors.  
The efficient geometry design achieves very low on-  
state resistance combined with high transconductance.  
HEXFET transistors also feature all of the well-  
established advantages of MOSFETs, such as voltage  
control, very fast switching, ease of paralleling and  
electrical parameter temperature stability. They are well-  
suited for applications such as switching power supplies,  
motor controls, inverters, choppers, audio amplifiers,  
high energy pulse circuits, and virtually any application  
where high reliability is required. The HEXFET  
transistor’s totally isolated package eliminates the need  
for additional isolating material between the device and  
the heatsink. This improves thermal efficiency and  
reduces drain capacitance.  
TO-254AA  
Features:  
n
n
n
n
n
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Electrically Isolated  
Dynamic dv/dt Rating  
n Light-weight  
Absolute Maximum Ratings  
Parameter  
Units  
I
@ V  
@ V  
= 10V, T = 25°C  
Continuous Drain Current  
35*  
D
D
GS  
GS  
C
A
I
= 10V, T = 100°C Continuous Drain Current  
28  
140  
C
I
Pulsed Drain Current À  
Max. Power Dissipation  
Linear Derating Factor  
DM  
@ T = 25°C  
P
250  
W
W/°C  
V
D
C
2.0  
V
Gate-to-Source Voltage  
Single Pulse Avalanche Energy Á  
Avalanche Current À  
±20  
GS  
E
700  
mJ  
A
AS  
I
35  
AR  
E
Repetitive Avalanche Energy À  
Peak Diode Recovery dv/dt   
Operating Junction  
25  
mJ  
V/ns  
AR  
dv/dt  
4.3  
T
-55 to 150  
J
oC  
g
T
Storage Temperature Range  
STG  
300 ( 0.063 in.(1.6mm) from case for 10s)  
9.3 (Typical)  
Lead Temperature  
Weight  
* Current is limited by Package  
For footnotes refer to the last page  
www.irf.com  
1
01/18/07  

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