Datasheet > IRFBC40AS, SiHFBC40AS

IRFBC40AS, SiHFBC40AS

更新时间： 2024-10-16 14:54:59

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
10页	382K
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Power MOSFET

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IRFBC40AS, SiHFBC40AS

www.vishay.com

Vishay Siliconix

Power MOSFET

FEATURES

• Low gate charge Q_gresults in simple drive

requirement

D²PAK (TO-263)

Available

• Improved gate, avalanche and dynamic dV/dt

ruggedness

• Fully characterized capacitance and avalanche

voltage and current

• Effective C_ossspecified

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

N-Channel MOSFET

Note

This datasheet provides information about parts that are

RoHS-compliant and / or parts that are non RoHS-compliant. For

example, parts with lead (Pb) terminations are not RoHS-compliant.

Please see the information / tables in this datasheet for details



PRODUCT SUMMARY



V_DS(V)

600

1.2



R_DS(on)()

V_GS= 10 V

Q_gmax. (nC)

APPLICATIONS

_gs(nC)

_gd(nC)

• Switch mode power supply (SMPS)

• Uninterruptible power supply

• High speed power switching

Configuration

Single

TYPICAL SMPS TOPOLOGIES

• Single transistor forward

ORDERING INFORMATION

Package

D²PAK (TO-263)

SiHFBC40AS-GE3

IRFBC40ASPbF

D²PAK (TO-263)

SiHFBC40ASTRL-GE3 ^a

IRFBC40ASTRLPbF ^a

D²PAK (TO-263)

SiHFBC40ASTRR-GE3 ^a

IRFBC40ASTRRPbF ^a

Lead (Pb)-free and halogen-free

Lead (Pb)-free

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

600

UNIT

Drain-source voltage

Gate-source voltage

V_DS

V_GS

_C= 25 °C

6.2

Continuous drain current ^e

V_GSat 10 V

I_D

T_C= 100 °C

3.9

Pulsed drain current ^{a, e}

I_DM

Linear derating factor

1.0

W/°C

Single pulse avalanche energy ^b

Repetitive avalanche current ^a

Repetitive avalanche energy ^a

E_AS

I_AR

570

6.2

E_AR

Maximum power dissipation

_C= 25 °C

for 10 s

P_D

125

Peak diode recovery dV/dt ^{c, e}

Operating junction and storage temperature range

Soldering recommendations (peak temperature) ^d

dV/dt

T_J, T_stg

6.0

V/ns

-55 to +150

300

°C

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)

b. Starting T_J= 25 °C, L = 29.6 mH, R_g= 25 , I_AS= 6.2 A (see fig. 12)

c. I_SD 6.2 A, dI/dt  88 A/μs, V_DD V_DS, T_J 150 °C

d. 1.6 mm from case

e. Uses IRFBC40A, SiHFBC40A data and test conditions

S21-0943-Rev. E, 20-Sep-2021

Document Number: 91113

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...10

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与IRFBC40AS, SiHFBC40AS相关器件

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IRFBC40ASPBF	VISHAY	获取价格	Power MOSFET
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IRFBC40ASTRL	VISHAY	获取价格	Power MOSFET
IRFBC40ASTRLPBF	VISHAY	获取价格	Power MOSFET
IRFBC40ASTRR	VISHAY	获取价格	Power MOSFET
IRFBC40ASTRRPBF	VISHAY	获取价格	Power MOSFET
IRFBC40L	VISHAY	获取价格	Power MOSFET
IRFBC40L	INFINEON	获取价格	Power MOSFET(Vdss=600V, Rds(on)=1.2ohm, Id=6.2A)
IRFBC40LC	VISHAY	获取价格	Power MOSFET
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