Datasheet > IRFB7537

IRFB7537

更新时间： 2023-12-06 20:01:55

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
13页	654K
描述
The StrongIRFET? power MOSFET family is optimized for low RDS(on)?and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.?

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IRFB7537 数据手册

IRFB/S/SL7537PbF

0.1

D = 0.50

0.20

0.10

0.05

0.02

0.01

SINGLE PULSE

( THERMAL RESPONSE )

0.001

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

0.0001

1E-006

1E-005

0.0001

0.001

0.01

0.1

, Rectangular Pulse Duration (sec)

Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case

1000

100

Allowed avalanche Current vs avalanche

pulsewidth, tav, assuming Tj = 150°C and

Tstart =25°C (Single Pulse)

Allowed avalanche Current vs avalanche

pulsewidth, tav, assuming  j = 25°C and

Tstart = 150°C.

0.1

1.0E-06

1.0E-05

1.0E-04

1.0E-03

1.0E-02

1.0E-01

tav (sec)

Fig 15. Avalanche Current vs. Pulse Width

300

250

200

150

100

TOP

BOTTOM 1.0% Duty Cycle

= 100A

Single Pulse

Notes on Repetitive Avalanche Curves , Figures 15, 16:

(For further info, see AN-1005 at www.irf.com)

1.Avalanche failures assumption:

Purely a thermal phenomenon and failure occurs at a

temperature far in excess of T_jmax. This is validated for every

part type.

2. Safe operation in Avalanche is allowed as long asT_jmaxis not

exceeded.

3. Equation below based on circuit and waveforms shown in Figures

23a, 23b.

4. P_{D (ave)}= Average power dissipation per single avalanche pulse.

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage

increase during avalanche).

6. I_av= Allowable avalanche current.

7. T = Allowable rise in junction temperature, not to exceed T_jmax

(assumed as 25°C in Figure 14, 15).

t_av= Average time in avalanche.

D = Duty cycle in avalanche = tav ·f

100

125

150

175

Z_thJC(D, t_av) = Transient thermal resistance, see Figures 14)

Starting T , Junction Temperature (°C)

PD (ave) = 1/2 ( 1.3·BV·I_av) = T/ Z_thJC

_av= 2T/ [1.3·BV·Z_th]

E_{AS (AR)}= P_{D (ave)· av}

Fig 16. Maximum Avalanche Energy vs. Temperature

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