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IRFB4510

更新时间： 2023-12-06 20:11:00
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 218K
描述
The StrongIRFET? power MOSFET family is optimized for low RDS(on)?and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.?

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IRFB4510 数据手册

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IRFB4510PbF  
Static @ TJ = 25°C (unless otherwise specified)  
Symbol  
V(BR)DSS  
Parameter  
Drain-to-Source Breakdown Voltage  
Min. Typ. Max. Units  
Conditions  
VGS = 0V, ID = 250μA  
100 ––– –––  
V
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient  
––– 0.11 ––– V/°C Reference to 25°C, ID = 5mA  
RDS(on)  
VGS(th)  
IDSS  
Static Drain-to-Source On-Resistance  
Gate Threshold Voltage  
Drain-to-Source Leakage Current  
––– 10.7 13.5  
2.0 ––– 4.0  
––– ––– 20  
VGS = 10V, ID = 37A  
VDS = VGS, ID = 100μA  
mΩ  
V
μA  
VDS = 100V, VGS = 0V  
––– ––– 250  
––– ––– 100  
––– ––– -100  
VDS = 80V, VGS = 0V, TJ = 125°C  
IGSS  
Gate-to-Source Forward Leakage  
Gate-to-Source Reverse Leakage  
Internal Gate Resistance  
nA VGS = 20V  
VGS = -20V  
Ω
RG  
––– 0.6  
–––  
Dynamic @ TJ = 25°C (unless otherwise specified)  
Symbol  
gfs  
Qg  
Qgs  
Qgd  
Qsync  
td(on)  
Parameter  
Forward Transconductance  
Total Gate Charge  
Min. Typ. Max. Units  
Conditions  
100 ––– –––  
S
VDS = 25V, ID = 37A  
nC ID = 37A  
DS =50V  
VGS = 10V  
ID = 37A, VDS =0V, VGS = 10V  
ns VDD = 65V  
–––  
–––  
–––  
–––  
–––  
–––  
–––  
–––  
58  
14  
18  
40  
13  
32  
28  
28  
87  
–––  
Gate-to-Source Charge  
V
Gate-to-Drain ("Miller") Charge  
Total Gate Charge Sync. (Qg - Qgd)  
Turn-On Delay Time  
Rise Time  
Turn-Off Delay Time  
–––  
–––  
–––  
–––  
–––  
tr  
ID = 37A  
RG =2.7Ω  
VGS = 10V  
td(off)  
tf  
Fall Time  
Ciss  
Coss  
Crss  
Coss eff. (ER)  
Coss eff. (TR)  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Effective Output Capacitance (Energy Related)  
Effective Output Capacitance (Time Related)  
––– 3180 –––  
––– 220 –––  
––– 120 –––  
––– 260 –––  
––– 325 –––  
pF VGS = 0V  
VDS = 50V  
ƒ = 1.0MHz, See Fig.5  
VGS = 0V, VDS = 0V to 80V , See Fig.1  
VGS = 0V, VDS = 0V to 80V  
Diode Characteristics  
Symbol  
Parameter  
Min. Typ. Max. Units  
Conditions  
D
IS  
Continuous Source Current  
(Body Diode)  
Pulsed Source Current  
(Body Diode)  
Diode Forward Voltage  
Reverse Recovery Time  
––– –––  
A
A
V
MOSFET symbol  
showing the  
integral reverse  
p-n junction diode.  
62  
G
ISM  
––– ––– 250  
S
VSD  
trr  
––– ––– 1.3  
TJ = 25°C, IS = 37A, VGS = 0V  
–––  
–––  
–––  
54  
60  
95  
81  
90  
140  
ns TJ = 25°C  
TJ = 125°C  
nC TJ = 25°C  
TJ = 125°C  
VR = 85V,  
IF = 37A  
di/dt = 100A/μs  
Qrr  
Reverse Recovery Charge  
––– 130 195  
––– 3.3 –––  
IRRM  
ton  
Reverse Recovery Current  
Forward Turn-On Time  
A
TJ = 25°C  
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)  
Notes:  
 Repetitive rating; pulse width limited by max. junction  
temperature.  
‚ Limited by TJmax, starting TJ = 25°C, L = 0.192mH  
RG = 25Ω, IAS = 37A, VGS =10V. Part not recommended for use  
above this value.  
ꢀ Coss eff. (TR) is a fixed capacitance that gives the same charging time  
as Coss while VDS is rising from 0 to 80% VDSS  
.
† Coss eff. (ER) is a fixed capacitance that gives the same energy as  
Coss while VDS is rising from 0 to 80% VDSS  
.
‡ Rθ is measured at TJ approximately 90°C.  
ƒ ISD ≤ 37A, di/dt ≤ 1550A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.  
„ Pulse width ≤ 400μs; duty cycle ≤ 2%.  
2
www.irf.com  
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