Datasheet > IRFB4510

IRFB4510

更新时间： 2023-12-06 20:11:00

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	218K
描述
The StrongIRFET? power MOSFET family is optimized for low RDS(on)?and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.?

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IRFB4510 数据手册

IRFB4510PbF

Driver Gate Drive

P.W.

Period

D.U.T

Period

D =

=10V

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

D.U.T. I Waveform

Reverse

Recovery

Current

Body Diode Forward

Current

di/dt

D.U.T. V Waveform

Diode Recovery

dv/dt

V_DD

Re-Applied

Voltage

• dv/dt controlled by R_G

R_G

Body Diode

Forward Drop

• Driver same type as D.U.T.

• I_SDcontrolled by Duty Factor "D"

• D.U.T. - Device Under Test

Inductor Current

Inductor Curent

Ripple ≤ 5%

* V_GS= 5V for Logic Level Devices

Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel

HEXFET^®Power MOSFETs

(BR)DSS

15V

DRIVER

D.U.T

20V

0.01

Fig 22b. Unclamped Inductive Waveforms

Fig 22a. Unclamped Inductive Test Circuit

L_D

V_DS

90%

V_DD

D.U.T

10%

V_GS

Second Pulse Width < 1μs

Duty Factor < 0.1%

t_d(on)

t_d(off)

t_r

t_f

Fig 23a. Switching Time Test Circuit

Fig 23b. Switching Time Waveforms

Vds

Vgs

VCC

DUT

Vgs(th)

20K

Qgs1

Qgs2

Qgodr

Qgd

Fig 24a. Gate Charge Test Circuit

Fig 24b. Gate Charge Waveform

www.irf.com

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