Datasheet > IRF9Z34

IRF9Z34

更新时间： 2024-11-25 12:33:43

品牌	Logo	应用领域
科盛美 - KERSEMI		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
7页	7497K
描述
Power MOSFET Dynamic dV/dt Rating Repetitive Avalanche Rated P-Channel

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中文翻译

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IRF9Z34 数据手册

IRF9Z34, SiHF9Z34

Power MOSFET

FEATURES

• Dynamic dV/dt Rating

PRODUCT SUMMARY

V_DS(V)

- 60

Available

• Repetitive Avalanche Rated

• P-Channel

R_DS(on)(Ω)

V_GS= - 10 V

0.14

RoHS*

Q_g(Max.) (nC)

9.9

COMPLIANT

• 175 °C Operating Temperature

• Fast Switching

_gs(nC)

_gd(nC)

• Ease of Paralleling

Configuration

Single

• Simple Drive Requirements

• Lead (Pb)-free Available

TO-220

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation

levels to approximately 50 W. The low thermal resistance

and low package cost of the TO-220 contribute to its wide

acceptance throughout the industry.

P-Channel MOSFET

ORDERING INFORMATION

Package

TO-220

IRF9Z34PbF

SiHF9Z34-E3

IRF9Z34

Lead (Pb)-free

SnPb

SiHF9Z34

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

- 60

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

_C= 25 °C

- 18

Continuous Drain Current

V_GSat - 10 V

I_D

T_C= 100 °C

- 13

Pulsed Drain Current^a

I_DM

- 72

Linear Derating Factor

0.59

370

W/°C

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

Repetitive Avalanche Energy^a

Maximum Power Dissipation

Peak Diode Recovery dV/dt^c

E_AS

I_AR

- 18

E_AR

8.8

T_C= 25 °C

P_D

dV/dt

T_J, T_stg

- 4.5

- 55 to + 175

300^d

V/ns

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

°C

for 10 s

lbf · in

N · m

Mounting Torque

6-32 or M3 screw

1.1

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= - 25 V, starting T_J= 25 °C, L = 1.3 mH, R_G= 25 Ω, I_AS= -18 A (see fig. 12).

c. I_SD≤ - 18 A, dI/dt ≤ 170 A/µs, V_DD≤ V_DS, T_J≤ 175 °C.

d. 1.6 mm from case.

www.kersemi.com

12 3 4 5 6 7

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与IRF9Z34相关器件

型号	品牌	获取价格	描述	数据表
IRF9Z34-012PBF	VISHAY	获取价格	Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Meta
IRF9Z34-015PBF	VISHAY	获取价格	Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Meta
IRF9Z34F	INFINEON	获取价格	Power Field-Effect Transistor, 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Se
IRF9Z34FPBF	INFINEON	获取价格	Power Field-Effect Transistor, 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Se
IRF9Z34FX	INFINEON	获取价格	Power Field-Effect Transistor, 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Se
IRF9Z34FXPBF	INFINEON	获取价格	Power Field-Effect Transistor, 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Se
IRF9Z34L	INFINEON	获取价格	Power MOSFET(Vdss=-60V, Rds(on)=0.14ohm, Id=-18A)
IRF9Z34L	VISHAY	获取价格	Power MOSFET
IRF9Z34LPBF	INFINEON	获取价格	Surface Mount
IRF9Z34LPBF	VISHAY	获取价格	Power MOSFET

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