IRF9Z34L

更新时间： 2024-11-21 05:39:27

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	2460K
描述
Power MOSFET

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中文翻译

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数据手册

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IRF9Z34L 数据手册

IRF9Z34S, SiHF9Z34S, IRF9Z34L, SiHF9Z34L

Vishay Siliconix

Power MOSFET

FEATURES

• Advanced Process Technology

PRODUCT SUMMARY

V_DS(V)

- 60

Available

• Surface Mount (IRF9Z34S/SiHF9Z34S)

R_DS(on)(Ω)

V_GS= - 10 V

0.14

_{Low-Profile Through-Hole (IRSiHF9Z34L/SiHF9Z34L)}RoHS*

•

COMPLIANT

Q_g(Max.) (nC)

9.9

• 175 °C Operating Temperature

• Fast Switching

_gs(nC)

_gd(nC)

• P-Channel

Configuration

Single

• Fully Avalanche Rated

• Lead (Pb)-free Available

DESCRIPTION

D²PAK (TO-263)

I²PAK (TO-262)

Third generation Power MOSFETs from Vishay utilize

advanced processing techniques to achieve extremely low

on-resistance per silicon area. This benefit, combined with

the fast switching speed and ruggedized device design that

Power MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use in a

wide variety of applications.

The D²PAK is a surface mount power package capable of

accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible

on-resistance in any existing surface mount package. The

D²PAK is suitable for high current applications because of its

low internal connection resistance and can dissipate up to

2.0 W in a typical surface mount application.

P-Channel MOSFET

The through-hole version (IRSiHF9Z34L/SiHF9Z34L) is

available for low-profile applications.

ORDERING INFORMATION

Package

D²PAK (TO-263)

I²PAK (TO-262)

IRF9Z34SPbF

SiHF9Z34S-E3

IRF9Z34S

IRF9Z34STRLPbF^a

SiHF9Z34STL-E3^a

IRF9Z34STRL^a

IRF9Z34STRRPbF^a

SiHF9Z34STR-E3^a

IRF9Z34STRR^a

IRF9Z34LPbF

SiHF9Z34L-E3

IRF9Z34L

Lead (Pb)-free

SnPb

SiHF9Z34S

SiHF9Z34STL^a

SiHF9Z34STR^a

SiHF9Z34L

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

- 60

V_GS

T_C= 25 °C

T_C=100°C

- 18

- 13

- 72

0.59

370

- 18

8.8

Continuous Drain Current

V_GSat - 10 V

I_D

Pulsed Drain Current^{a, e}

Linear Derating Factor

Single Pulse Avalanche Energy^{b, e}

Avalanche Current^a

I_DM

W/°C

E_AS

I_AR

Repetiitive Avalanche Energy^a

E_AR

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91093

S-Pending-Rev. A, 03-Jun-08

www.vishay.com

WORK-IN-PROGRESS

12 3 4 5 6 7 8

中文翻译

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与IRF9Z34L相关器件

型号	品牌	获取价格	描述	数据表
IRF9Z34LPBF	INFINEON	获取价格	Surface Mount
IRF9Z34LPBF	VISHAY	获取价格	Power MOSFET
IRF9Z34N	INFINEON	获取价格	Power MOSFET(Vdss=-55V, Rds(on)=0.10ohm, Id=-19A)
IRF9Z34N	UMW	获取价格	种类:P-Channel;漏源电压（Vdss）:-55V;持续漏极电流（Id）（在25°C
IRF9Z34NL	INFINEON	获取价格	Power MOSFET(Vdss=-55V, Rds(on)=0.10ohm, Id=-19A)
IRF9Z34NLPBF	INFINEON	获取价格	Advanced Process Technology
IRF9Z34NPBF	INFINEON	获取价格	HEXFET㈢ POWER MOSFET
IRF9Z34NS	INFINEON	获取价格	Power MOSFET(Vdss=-55V, Rds(on)=0.10ohm, Id=-19A)
IRF9Z34NSPBF	INFINEON	获取价格	Advanced Process Technology
IRF9Z34NSTRL	INFINEON	获取价格	Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal

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