Datasheet > IRF9Z34N

IRF9Z34N

更新时间： 2024-05-23 22:23:25

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
8页	687K
描述
种类:P-Channel;漏源电压（Vdss）:-55V;持续漏极电流（Id）（在25°C时）:-19A;Vgs(th)(V):±20;漏源导通电阻:100mΩ@-10V

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IRF9Z34N 数据手册

IRF9Z34

-55V P-Channel MOSFET

UUMWW

Description

The TO-220 package is universally preferred for all

commercial-industrialapplications at power

dissipation levels to approximately 50 watts.The

lowthermal resistance and low package cost of the

TO-220 contribute to its wide acceptance throughout

the industry.

Features

Advanced Process Technology

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

Fully Avalanche Rated

Lead-Free

V_DS(V) = -55V

I_D= -19A

R_DS(ON)

< 100mΩ (V_GS= -10V)

Absolute Maximum Ratings

Parameter

Maxꢀ

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ -10V

Pulsed Drain Current

-19

-14

-68

P_D@T_C= 25°C

Power Dissipation

68W

Linear Derating Factor

0(45

W/°C

V_GS

E_AS

I_AR

Gate-to-Source Voltage

± 20

Single Pulse Avalanche Energy

Avalanche Current

180

-10

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

6(8mJ

-5(0

V/ns

°C

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw

300 ꢀ1(6mm from case )

10 lbfin ꢀ1(1Nm)

Thermal Resistance

Parameter

Typꢀ

Maxꢀ

Units

R_θJC

R_θCS

R_θJA

Junction-to-Case

2(2

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

0(50

°C/W

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6 7 8

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