Datasheet > IRF9Z34S, SiHF9Z34S

IRF9Z34S, SiHF9Z34S

更新时间： 2024-11-26 14:55:11

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威世 - VISHAY		/
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Power MOSFET

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IRF9Z34S, SiHF9Z34S

www.vishay.com

Vishay Siliconix

Power MOSFET

FEATURES

• Advanced process technology

D²PAK (TO-263)

• Surface mount (IRF9Z34S, SiHF9Z34S)

• 175 °C operating temperature

• Fast switching

Available

• P-channel

• Fully avalanche rated

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

Note

P-Channel MOSFET

This datasheet provides information about parts that are

RoHS-compliant and / or parts that are non RoHS-compliant. For

example, parts with lead (Pb) terminations are not RoHS-compliant.

Please see the information / tables in this datasheet for details



PRODUCT SUMMARY

V_DS(V)

-60

DESCRIPTION

Third generation power MOSFETs from Vishay utilize

advanced processing techniques to achieve extremely low

on-resistance per silicon area. This benefit, combined with

the fast switching speed and ruggedized device design that

power MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use in a

wide variety of applications.

_DS(on)()

V_GS= -10 V

0.14

Q_gmax. (nC)

9.9

_gs(nC)

_gd(nC)

Configuration

Single

The D²PAK is a surface mount power package capable of

accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible

on-resistance in any existing surface mount package. The

D²PAK is suitable for high current applications because of

its low internal connection resistance and can dissipate up

to 2.0 W in a typical surface mount application.

ORDERING INFORMATION

Package

D²PAK (TO-263)

Lead (Pb)-free and Halogen-free

Lead (Pb)-free

SiHF9Z34STRL-GE3 ^a

IRF9Z34STRLPbF ^a

SiHF9Z34STRR-GE3 ^a

IRF9Z34STRRPbF ^a

IRF9Z34SPbF

Note

a. See device orientation

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

-60

V_GS

_C= 25 °C

-18

Continuous Drain Current

V_GSat -10 V

I_D

T_C= 100 °C

-13

Pulsed Drain Current ^{a, e}

Linear Derating Factor

Single Pulse Avalanche Energy ^{b, e}

Avalanche Current ^a

I_DM

-72

0.59

370

W/°C

E_AS

I_AR

-18

Repetitive Avalanche Energy ^a

E_AR

8.8

_C= 25 °C

Maximum Power Dissipation

P_D

V/ns

°C

T_A= 25 °C

3.7

Peak Diode Recovery dV/dt ^{c, e}

dV/dt

-4.5

-55 to +175

300

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak temperature) ^d

T_J, T_stg

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)

b. V_DD= - 25 V, starting T_J= 25 °C, L = 1.3 mH, R_g= 25 , I_AS= - 18 A (see fig. 12)

c. I_SD - 18 A, dI/dt  170 A/μs, V_DD V_DS, T_J 175 °C

d. 1.6 mm from case

e. Uses IRF9Z34, SiHF9Z34 data and test conditions

S21-0943-Rev. F, 20-Sep-2021

Document Number: 91093

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...9

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与IRF9Z34S, SiHF9Z34S相关器件

型号	品牌	获取价格	描述	数据表
IRF9Z34SPBF	INFINEON	获取价格	Surface Mount
IRF9Z34SPBF	VISHAY	获取价格	Power MOSFET
IRF9Z34STRL	VISHAY	获取价格	Power MOSFET
IRF9Z34STRLPBF	VISHAY	获取价格	Power MOSFET
IRF9Z34STRR	VISHAY	获取价格	Power MOSFET
IRF9Z34STRRPBF	VISHAY	获取价格	Power MOSFET
IRF9Z35	INFINEON	获取价格	Transistor
IRF9Z35	SAMSUNG	获取价格	Power Field-Effect Transistor, 15A I(D), 60V, 0.21ohm, 1-Element, P-Channel, Silicon, Meta
IRFAC30	INFINEON	获取价格	REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
IRFAC32	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 600V V(BR)DSS \| 3.2A I(D) \| TO-204AA

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