IRF840PBF

更新时间： 2024-11-01 05:39:27

品牌	Logo	应用领域
威世 - VISHAY		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
8页	135K
描述
Power MOSFET

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

IRF840PBF 数据手册

IRF840, SiHF840

Vishay Siliconix

Power MOSFET

FEATURES

• Dynamic dV/dt Rating

PRODUCT SUMMARY

V_DS(V)

500

Available

• Repetitive Avalanche Rated

• Fast Switching

_DS(on)(Ω)

V_GS= 10 V

0.85

RoHS*

Q_g(Max.) (nC)

9.3

COMPLIANT

• Ease of Paralleling

_gs(nC)

_gd(nC)

• Simple Drive Requirements

• Lead (Pb)-free Available

Configuration

Single

DESCRIPTION

TO-220

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation

levels to approximately 50 W. The low thermal resistance

and low package cost of the TO-220 contribute to its wide

acceptance throughout the industry.

N-Channel MOSFET

ORDERING INFORMATION

Package

TO-220

IRF840PbF

SiHF840-E3

IRF840

Lead (Pb)-free

SnPb

SiHF840

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

500

V_GS

T_C= 25 °C

T_C=100°C

8.0

Continuous Drain Current

_GSat 10 V

I_D

5.1

Pulsed Drain Current^a

I_DM

Linear Derating Factor

1.0

W/°C

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

Repetitive Avalanche Energy^a

E_AS

I_AR

510

8.0

E_AR

Maximum Power Dissipation

Peak Diode Recovery dV/dt^c

_C= 25 °C

P_D

125

3.5

dV/dt

T_J, T_stg

V/ns

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

- 55 to + 150

300^d

°C

for 10 s

6-32 or M3 screw

lbf · in

N · m

Mounting Torque

1.1

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 50 V, starting T_J= 25 °C, L = 14 mH, R_G= 25 Ω, I_AS= 8.0 A (see fig. 12).

c. I_SD≤ 8.0 A, dI/dt ≤ 100 A/µs, V_DD≤ V_DS, T_J≤ 150 °C.

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91070

S-81290-Rev. B, 16-Jun-08

www.vishay.com

12 3 4 5 6 7 8

中文翻译

下载PDF

IRF840PBF 替代型号

型号	品牌	替代类型	描述	数据表
NTE2398	NTE	功能相似	MOSFET N-Ch, Enhancement Mode High Speed Switch

与IRF840PBF相关器件

型号	品牌	获取价格	描述	数据表
IRF840R	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| 8A I(D) \| TO-220AB
IRF840S	INFINEON	获取价格	Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A)
IRF840S	VISHAY	获取价格	Power MOSFET
IRF840S	TRSYS	获取价格	Power MOSFET
IRF840S	A-POWER	获取价格	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
IRF840S	MOTOROLA	获取价格	8A, 500V, 0.85ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRF840S (KRF840S)	KEXIN	获取价格	N-Channel MOSFET
IRF840S, SiHF840S	VISHAY	获取价格	Power MOSFET
IRF840SPBF	VISHAY	获取价格	Power MOSFET
IRF840SPBF	INFINEON	获取价格	HEXFET Power MOSFET