Datasheet > 晶体管 > 功率场效应晶体管> IRF840LCSTRR

IRF840LCSTRR

更新时间： 2024-02-01 07:58:56

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	1029K
描述
Power MOSFET

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技术参数
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IRF840LCSTRR 技术参数

生命周期：	Obsolete	包装说明：	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code：	unknown	风险等级：	5.57
外壳连接：	DRAIN	配置：	SINGLE
最小漏源击穿电压：	500 V	最大漏极电流 (ID)：	8 A
最大漏源导通电阻：	0.85 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：	TO-220AB	JESD-30 代码：	R-PSFM-T3
元件数量：	1	端子数量：	3
工作模式：	ENHANCEMENT MODE	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
极性/信道类型：	N-CHANNEL	功耗环境最大值：	125 W
认证状态：	Not Qualified	表面贴装：	NO
端子形式：	THROUGH-HOLE	端子位置：	SINGLE
晶体管元件材料：	SILICON

IRF840LCSTRR 数据手册

IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL

Vishay Siliconix

Power MOSFET

FEATURES

PRODUCT SUMMARY

V_DS(V)

• Ultra Low Gate Charge

500

• Reduced Gate Drive Requirement

Available

R_DS(on)(Ω)

V_GS= 10 V

0.85

• Enhanced 30 V V_GSRating

• Reduced C_iss, C_oss, C_rss

• Extremely High Frequency Operation

• Repetitive Avalanche Rated

• Lead (Pb)-free Available

RoHS*

Q_g(Max.) (nC)

COMPLIANT

_gs(nC)

_gd(nC)

Configuration

Single

DESCRIPTION

This new series of low charge Power MOSFETs achieve

significantly lower gate charge then conventional Power

MOSFETs. Utilizing the new LCDMOS (low charge device

Power MOSFETs) technology, the device improvements are

achieved without added product cost, allowing for reduced

gate drive requirements and total system savings. In

addition, reduced switching losses and improved efficiency

are achievable in a variety of high frequency applications.

Frequencies of a few MHz at high current are possible using

the new low charge Power MOSFETs.

D²PAK

(TO-263)

I²PAK

(TO-262)

N-Channel MOSFET

These device improvements combined with the proven

ruggedness and reliability that characterize Power

MOSFETs offer the designer a new power transistor

standard for switching applications.

ORDERING INFORMATION

Package

D²PAK (TO-263)

IRF840LCSPbF

D²PAK (TO-263)

IRF840LCSTRR^a

SiHF840LCST^a

I²PAK (TO-262)

IRF840LCLPbF

SiHF840LCL-E3

IRF840LCL

Lead (Pb)-free

SiHF840LCS-E3

IRF840LCS

SiHF840LCS

SnPb

SiHF840LCL

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

500

_C= 25 °C

8.0

Continuous Drain Current

_GSat 10 V

I_D

T_C=100°C

5.1

Pulsed Drain Current^{a, e}

Linear Derating Factor

Single Pulse Avalanche Energy^{b, e}

Avalanche Current^a

I_DM

1.0

W/°C

E_AS

I_AR

510

8.0

Repetiitive Avalanche Energy^a

E_AR

_C= 25 °C

3.1

Maximum Power Dissipation

P_D

V/ns

°C

T_A= 25 °C

125

Peak Diode Recovery dV/dt^{c, e}

dV/dt

3.5

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

T_J, T_stg

- 55 to + 150

300^d

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Starting T_J= 25 °C, L = 14 mH, R_G= 25 Ω, I_AS= 8.0 A (see fig. 12).

c. I_SD≤ 8.0 A, dI/dt ≤ 100 A/µs, V_DD≤ V_DS, T_J≤ 150 °C.

d. 1.6 mm from case.

e. Uses IRF840LC/SiHF840LC data and test conditions.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91068

S-Pending-Rev. A, 02-Jun-08

www.vishay.com

WORK-IN-PROGRESS

12 3 4 5 6 7 8

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与IRF840LCSTRR相关器件

型号	品牌	获取价格	描述	数据表
IRF840LCSTRRPBF	INFINEON	获取价格	暂无描述
IRF840N	MOTOROLA	获取价格	Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Meta
IRF840PBF	VISHAY	获取价格	Power MOSFET
IRF840PBF	INFINEON	获取价格	HEXFET POWER MOSFET
IRF840R	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| 8A I(D) \| TO-220AB
IRF840S	INFINEON	获取价格	Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A)
IRF840S	VISHAY	获取价格	Power MOSFET
IRF840S	TRSYS	获取价格	Power MOSFET
IRF840S	A-POWER	获取价格	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
IRF840S	MOTOROLA	获取价格	8A, 500V, 0.85ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

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