IRF840LCS

更新时间： 2024-11-29 22:51:35

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	175K
描述
Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A)

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IRF840LCS 数据手册

PD-93766

IRF840LCS

IRF840LCL

HEXFET^®Power MOSFET

l Ultra Low Gate Charge

l Reduced Gate Drive Requirement

l Enhanced 30V V_GSRating

l Reduced C_ISS, C_OSS, C_RSS

l Extremely High Frequency Operation

l Repetitive Avalanche Rated

V_DSS= 500V

R_DS(on)= 0.85Ω

I_D= 8.0A

Description

ThisnewseriesoflowchargeHEXFET^®powerMOSFETs

achieve significant lower gate charge over conventional

MOSFETs. Utilizing the new LCDMOS (low charge

deviceMOSFETs) technology,thedeviceimprovements

are achieved without added product cost, allowing for

reducegatedriverequirementsandtotalsystemsavings.

In addition, reduced switching losses and improved

efficiency and achievable in a variety of high frequency

applications. Frequencies of a few MHz at high current

are possible using the new low charge MOSFETs.

These device improvements combined with the proven

ruggedness and reliability that characterize of HEXFET

power MOSFETs offer the designer a new power

transistor standard for switching applications.

D²Pak

IRF840LCS

TO-262

IRF840LCL

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10Vꢀ

Pulsed Drain Current ꢀ

Power Dissipation

8.0

5.1

P_D@T_A= 25°C

P_D@T_C= 25°C

3.1

Power Dissipation

125

Linear Derating Factor

1.0

W/°C

V_GS

E_AS

I_AR

Gate-to-Source Voltage

± 30

510

Single Pulse Avalanche Energy‚ꢀ

Avalanche Current

8.0

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt ꢀ

Operating Junction and

V/ns

3.5

-55 to + 150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

300 (1.6mm from case)

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

1.0

Units

R_θJC

°C/W

R_θJA

Junction-to-Ambient (PCB Mounted,steady-state)**

–––

www.irf.com

1/3/2000

12 3 4 5 6 7...10

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