Datasheet > IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL

IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL

更新时间： 2024-12-01 14:48:55

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威世 - VISHAY		/
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10页	226K
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Power MOSFET

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IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL

www.vishay.com

Vishay Siliconix

Power MOSFET

FEATURES

D²PAK (TO-263)

I²PAK (TO-262)

• Ultra low gate charge

• Reduced gate drive requirement

• Enhanced 30 V V_GSrating

• Reduced C_iss, C_oss, C_rss

• Extremely high frequency operation

• Repetitive avalanche rated

Available

• Material categorization: for definitions of

compliance please see www.vishay.com/doc?99912

Note

This datasheet provides information about parts that are

RoHS-compliant and / or parts that are non RoHS-compliant. For

example, parts with lead (Pb) terminations are not RoHS-compliant.

Please see the information / tables in this datasheet for details

N-Channel MOSFET

PRODUCT SUMMARY

V_DS(V)

DESCRIPTION

500

0.85

This series of low charge power MOSFETs achieve

significantly lower gate charge then conventional Power

MOSFETs. Utilizing the new LCDMOS (low charge device

Power MOSFETs) technology, the device improvements are

achieved without added product cost, allowing for reduced

gate drive requirements and total system savings. In

addition, reduced switching losses and improved efficiency

are achievable in a variety of high frequency applications.

Frequencies of a few MHz at high current are possible using

the new low charge Power MOSFETs.

R_DS(on)(Ω)

V_GS= 10 V

Q_gmax. (nC)

_gs(nC)

_gd(nC)

Configuration

Single

These device improvements combined with the proven

ruggedness and reliability that characterize Power

MOSFETs offer the designer a new power transistor

standard for switching applications.

ORDERING INFORMATION

Package

D²PAK (TO-263)

SiHF840LCS-GE3

I²PAK (TO-262)

SiHF840LCL-GE3

IRF840LCLPbF

Lead (Pb)-free and Halogen-free

IRF840LCSPbF

Lead (Pb)-free

IRF840LCSTRRPBF

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

500

T_C= 25 °C

_C= 100 °C

8.0

Continuous Drain Current

V_GSat 10 V

I_D

5.1

Pulsed Drain Current ^{a, e}

Linear Derating Factor

Single Pulse Avalanche Energy ^{b, e}

Avalanche Current ^a

I_DM

1.0

W/°C

E_AS

I_AR

510

8.0

Repetitive Avalanche Energy ^a

E_AR

_C= 25 °C

125

3.1

Maximum Power Dissipation

P_D

V/ns

°C

T_A= 25 °C

Peak Diode Recovery dV/dt ^{c, e}

dV/dt

3.5

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak temperature) ^d

T_J, T_stg

-55 to +150

300

For 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)

b. Starting T_J= 25 °C, L = 14 mH, R_g= 25 Ω, I_AS= 8.0 A (see fig. 12)

c. I_SD≤ 8.0 A, dI/dt ≤ 100 A/μs, V_DD≤ V_DS, T_J≤ 150 °C

d. 1.6 mm from case

e. Uses IRF840LC, SiHF840LC data and test conditions

S21-0901-Rev. D, 30-Aug-2021

Document Number: 91068

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...10

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与IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL相关器件

型号	品牌	获取价格	描述	数据表
IRF840LCSPBF	VISHAY	获取价格	Power MOSFET
IRF840LCSTRL	VISHAY	获取价格	Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Meta
IRF840LCSTRLPBF	VISHAY	获取价格	Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Meta
IRF840LCSTRR	VISHAY	获取价格	Power MOSFET
IRF840LCSTRRPBF	INFINEON	获取价格	暂无描述
IRF840N	MOTOROLA	获取价格	Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Meta
IRF840PBF	VISHAY	获取价格	Power MOSFET
IRF840PBF	INFINEON	获取价格	HEXFET POWER MOSFET
IRF840R	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| 8A I(D) \| TO-220AB
IRF840S	INFINEON	获取价格	Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A)

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