IRF840LCL

更新时间： 2024-09-21 04:23:19

品牌	Logo	应用领域
TRSYS		/
页数	文件大小	规格书
2页	156K
描述
Power MOSFET

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中文翻译

获取价格

数据手册

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IRF840LCL 数据手册

IRF840LCS/LCL

Power MOSFET

V_{DSS =}500V, R_DS(on)= 0.85 ohm, I_D= 8.0 A

Symbol

N Channel

ELECTRICAL CHARACTERISICS at

C Maximum. Unless stated Otherwise

Test Conditions

Tj = 25

Value

Typ

Parameter

Unit

Volt

Symbol

V_(BR)DSS

Max

Min

500

V_GS= 0 V_DC,I_D= 250µA

V_DS= 500V_DC, V_GS= 0V_DC

Drain to Source Breakdown Voltage

Drain to Source Leakage Current

I_DSS

250

µA

V_DS= 400V_DC, V_GS= 0V_DC

Tj=125

V_GS= +20V_DC

V_GS= -20V_DC

100

-100

I_GSS

Gate to Source Leakage Current

Gate Threshold Voltage

V_GS(th)

I_D= 250µA

V_DS= V_GS

2.0

4.0

Volt

R_DS(on)V_GS= 10V_DC, I_D= 4.8A

0.85

Static Drain to Source On - Resistance

Q_G

Gate Charge

I_D= 8.0A

Gate to Source Charge

Gate to Drain Charge

Q_GS

_DS= 400V_DC,

V_GS= 10V_DC

Q_GD

C_ISS

Input Capacitance

Output Capacitance

Transfer Capacitance

1100

170

V_DS= 25V_DC, V_GS= 0V_DC, f = 1.0MHZ

C_OSS

C_RSS

Turn On Delay Time

Turn Off Delay Time

Rise Time

(on)

(off)

V_DD= 250V_DC, I_D= 8.0A, R_G= 9.1

_D= 31

Fall Time

Continuous Source Current

Pulsed Source Current

8.0

I_S

I_SM

V_SD

E_AS

V_GS= 0V_DC, I_S=8.0A,Tp = 300µS

2.0

Forward Voltage (Diode)

Single Pulse Avalanche Energy

510

(Tj = 25 C unless stated otherwise)

MAXIMUM RATINGS

Parameter

Condition

Symbol

V_GS

Value

+/- 30V

500

Unit

Volt

Amp

Gate to Source Voltage

Drain to Source

Voltage

Continuous Drain Current

V_DSS

I_D

8.0

I_DM

P_D

Amp

Pulsed Drain Current

Total Power Dissapation

(T_A= 25 C)

125

Thermal Resistance

(Junction to Ambient)

R_TH

C/W

(J-A)

Maximum Operating Temperature Range (Tj) -55 to +150

Maximum Storage Temperature Range (Tstg) -55 to +150

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