Datasheet > 晶体管 > 功率场效应晶体管> IRF840LCLPBF

IRF840LCLPBF

更新时间： 2024-11-30 05:39:27

品牌	Logo	应用领域
威世 - VISHAY		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
8页	1029K
描述
Power MOSFET

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中文翻译

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数据手册

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IRF840LCLPBF 数据手册

IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL

Vishay Siliconix

Power MOSFET

FEATURES

PRODUCT SUMMARY

V_DS(V)

• Ultra Low Gate Charge

500

• Reduced Gate Drive Requirement

Available

R_DS(on)(Ω)

V_GS= 10 V

0.85

• Enhanced 30 V V_GSRating

• Reduced C_iss, C_oss, C_rss

• Extremely High Frequency Operation

• Repetitive Avalanche Rated

• Lead (Pb)-free Available

RoHS*

Q_g(Max.) (nC)

COMPLIANT

_gs(nC)

_gd(nC)

Configuration

Single

DESCRIPTION

This new series of low charge Power MOSFETs achieve

significantly lower gate charge then conventional Power

MOSFETs. Utilizing the new LCDMOS (low charge device

Power MOSFETs) technology, the device improvements are

achieved without added product cost, allowing for reduced

gate drive requirements and total system savings. In

addition, reduced switching losses and improved efficiency

are achievable in a variety of high frequency applications.

Frequencies of a few MHz at high current are possible using

the new low charge Power MOSFETs.

D²PAK

(TO-263)

I²PAK

(TO-262)

N-Channel MOSFET

These device improvements combined with the proven

ruggedness and reliability that characterize Power

MOSFETs offer the designer a new power transistor

standard for switching applications.

ORDERING INFORMATION

Package

D²PAK (TO-263)

IRF840LCSPbF

D²PAK (TO-263)

IRF840LCSTRR^a

SiHF840LCST^a

I²PAK (TO-262)

IRF840LCLPbF

SiHF840LCL-E3

IRF840LCL

Lead (Pb)-free

SiHF840LCS-E3

IRF840LCS

SiHF840LCS

SnPb

SiHF840LCL

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

500

_C= 25 °C

8.0

Continuous Drain Current

_GSat 10 V

I_D

T_C=100°C

5.1

Pulsed Drain Current^{a, e}

Linear Derating Factor

Single Pulse Avalanche Energy^{b, e}

Avalanche Current^a

I_DM

1.0

W/°C

E_AS

I_AR

510

8.0

Repetiitive Avalanche Energy^a

E_AR

_C= 25 °C

3.1

Maximum Power Dissipation

P_D

V/ns

°C

T_A= 25 °C

125

Peak Diode Recovery dV/dt^{c, e}

dV/dt

3.5

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

T_J, T_stg

- 55 to + 150

300^d

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Starting T_J= 25 °C, L = 14 mH, R_G= 25 Ω, I_AS= 8.0 A (see fig. 12).

c. I_SD≤ 8.0 A, dI/dt ≤ 100 A/µs, V_DD≤ V_DS, T_J≤ 150 °C.

d. 1.6 mm from case.

e. Uses IRF840LC/SiHF840LC data and test conditions.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91068

S-Pending-Rev. A, 02-Jun-08

www.vishay.com

WORK-IN-PROGRESS

12 3 4 5 6 7 8

中文翻译

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与IRF840LCLPBF相关器件

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IRF840LCLTRLPBF	VISHAY	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
IRF840LCLTRRPBF	VISHAY	获取价格	暂无描述
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