IRF840ASTRR

更新时间： 2024-11-29 05:39:27

品牌	Logo	应用领域
威世 - VISHAY		晶体晶体管开关脉冲
页数	文件大小	规格书
8页	919K
描述
Power MOSFET

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中文翻译

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数据手册
替代型号

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IRF840ASTRR 数据手册

IRF840AS, IRF840AL, SiHF840AS, SiHF840AL

Vishay Siliconix

Power MOSFET

FEATURES

• Low Gate Charge Q_gResults in Simple Drive

Requirement

PRODUCT SUMMARY

V_DS(V)

500

Available

_DS(on)(Ω)

V_GS= 10 V

0.85

• Improved Gate, Avalanche and Dynamic dV/dt RoHS*

Q_g(Max.) (nC)

COMPLIANT

Ruggedness

9.0

_gs(nC)

_gd(nC)

• Fully

Characterized

Capacitance

and

Avalanche Voltage and Current

Configuration

Single

• Effective C_ossSpecified

• Lead (Pb)-free Available

D²PAK

(TO-263)

I²PAK

(TO-262)

APPLICATIONS

• Switch Mode Power Supply (SMPS)

• Uninterruptible Power Supply

• High Speed Power Switching

TYPICAL SMPS TOPOLOGIES

• Two Transistor Forward

• Half Bridge

N-Channel MOSFET

• Full Bridge

ORDERING INFORMATION

Package

D²PAK (TO-263)

IRF840ASTRRPbF^a

SiHF840ASTR-E3^a

IRF840ASTRR^a

SiHF840ASTR^a

I²PAK (TO-262)

IRF840ALPbF

SiHF840AL-E3

IRF840AL

IRF840ASPbF

SiHF840AS-E3

IRF840AS

IRF840ASTRLPbF^a

SiHF840ASTL-E3^a

IRF840ASTRL^a

Lead (Pb)-free

SnPb

SiHF840AS

SiHF840ASTL^a

SiHF840AL

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

500

V_GS

T_C= 25 °C

T_C=100°C

8.0

Continuous Drain Current

_GSat 10 V

I_D

5.1

Pulsed Drain Current^a

I_DM

Linear Derating Factor

1.0

W/°C

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

Repetitive Avalanche Energy^a

E_AS

I_AR

510

8.0

E_AR

_C= 25 °C

125

Maximum Power Dissipation

P_D

V/ns

°C

T_A= 25 °C

3.1

Peak Diode Recovery dV/dt^{c, e}

dV/dt

5.0

Operating Junction and Storage Temperature Range

Soldering Temperature

T_J, T_stg

- 55 to + 150

300^d

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Starting T_J= 25 °C, L = 16 mH, R_G= 25 Ω, I_AS= 8.0 A (see fig. 12).

c. I_SD≤ 8.0 A, dI/dt ≤ 100 A/µs, V_DD≤ V_DS, T_J≤ 150 °C.

d. 1.6 mm from case.

e. Uses IRF840A/SiH840A data and test conditions.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91066

S-81412-Rev. A, 07-Jul-08

www.vishay.com

12 3 4 5 6 7 8

中文翻译

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IRF840ASTRR 替代型号

型号	品牌	替代类型	描述	数据表
IRF840AS	VISHAY	完全替代	Power MOSFET
IRF840ASTRRPBF	VISHAY	类似代替	Power MOSFET

与IRF840ASTRR相关器件

型号	品牌	获取价格	描述	数据表
IRF840ASTRRPBF	VISHAY	获取价格	Power MOSFET
IRF840B	FAIRCHILD	获取价格	500V N-Channel MOSFET
IRF840B	VISHAY	获取价格	D Series Power MOSFET
IRF840B_05	FAIRCHILD	获取价格	500V N-Channel MOSFET
IRF840BJ69Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 8A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal
IRF840D1	MOTOROLA	获取价格	8A, 500V, 0.85ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRF840F	ETC	获取价格	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS(188.09 k)
IRF840FI	STMICROELECTRONICS	获取价格	N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
IRF840FP	SUNTAC	获取价格	POWER MOSFET
IRF840FPBF	INFINEON	获取价格	Power Field-Effect Transistor, 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide S

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