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IRF840B PDF预览

IRF840B

更新时间: 2024-01-17 05:59:45
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
10页 912K
描述
500V N-Channel MOSFET

IRF840B 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:unknown风险等级:5.57
外壳连接:DRAIN配置:SINGLE
最小漏源击穿电压:500 V最大漏极电流 (ID):8 A
最大漏源导通电阻:0.85 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL功耗环境最大值:125 W
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管元件材料:SILICON

IRF840B 数据手册

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November 2001  
IRF840B/IRFS840B  
500V N-Channel MOSFET  
General Description  
Features  
These N-Channel enhancement mode power field effect  
transistors are produced using Fairchild’s proprietary,  
planar, DMOS technology.  
This advanced technology has been especially tailored to  
minimize on-state resistance, provide superior switching  
performance, and withstand high energy pulse in the  
avalanche and commutation mode. These devices are well  
suited for high efficiency switch mode power supplies,  
power factor correction and electronic lamp ballasts based  
on half bridge.  
8.0A, 500V, R  
= 0.8@V = 10 V  
DS(on) GS  
Low gate charge ( typical 41 nC)  
Low Crss ( typical 35 pF)  
Fast switching  
100% avalanche tested  
Improved dv/dt capability  
D
G
TO-220  
IRF Series  
TO-220F  
IRFS Series  
G
D S  
G D  
S
S
Absolute Maximum Ratings  
T = 25°C unless otherwise noted  
C
Symbol  
Parameter  
IRF840B  
Units  
V
IRFS840B  
V
I
Drain-Source Voltage  
500  
DSS  
- Continuous (T = 25°C)  
Drain Current  
8.0  
5.1  
32  
8.0  
5.1  
32  
A
D
C
- Continuous (T = 100°C)  
A
C
I
(Note 1)  
Drain Current  
- Pulsed  
A
DM  
V
E
I
Gate-Source Voltage  
± 30  
320  
8.0  
V
GSS  
AS  
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
Single Pulsed Avalanche Energy  
Avalanche Current  
mJ  
A
AR  
E
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
13.4  
3.5  
mJ  
V/ns  
W
AR  
dv/dt  
P
Power Dissipation (T = 25°C)  
134  
44  
D
C
- Derate above 25°C  
Operating and Storage Temperature Range  
1.08  
0.35  
W/°C  
°C  
T , T  
-55 to +150  
300  
J
STG  
Maximum lead temperature for soldering purposes,  
T
°C  
L
1/8" from case for 5 seconds  
* Drain current limited by maximum junction temperature.  
Thermal Characteristics  
Symbol  
Parameter  
IRF840B  
IRFS840B  
2.86  
Units  
°C/W  
°C/W  
°C/W  
R
R
R
Thermal Resistance, Junction-to-Case Max.  
Thermal Resistance, Case-to-Sink Typ.  
0.93  
0.5  
θJC  
--  
θCS  
Thermal Resistance, Junction-to-Ambient Max.  
62.5  
62.5  
θJA  
©2001 Fairchild Semiconductor Corporation  
Rev. A, November 2001  

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