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IRF840LC PDF预览

IRF840LC

更新时间： 2024-11-30 05:39:27
品牌 Logo 应用领域
威世 - VISHAY 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
8页 1514K
描述
Power MOSFET

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中文翻译

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IRF840LC 技术参数

是否无铅：含铅是否Rohs认证：不符合
生命周期：Active零件包装代码：TO-220AB
包装说明：TO-220AB, 3 PIN针数：3
Reach Compliance Code：compliant风险等级：5.03
Is Samacsys：N雪崩能效等级（Eas）：510 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：500 V最大漏极电流 (Abs) (ID)：8 A
最大漏极电流 (ID)：8 A最大漏源导通电阻：0.85 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3JESD-609代码：e0
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：125 W
最大脉冲漏极电流 (IDM)：28 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：NO
端子面层：TIN LEAD端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

IRF840LC 数据手册

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IRF840LC, SiHF840LC  
Vishay Siliconix  
Power MOSFET  
FEATURES  
PRODUCT SUMMARY  
VDS (V)  
• Ultra Low Gate Charge  
500  
Available  
• Reduced Gate Drive Requirement  
RDS(on) (Ω)  
VGS = 10 V  
0.85  
• Enhanced 30 V VGS Rating  
• Reduced Ciss, Coss, Crss  
• Extremely High Frequency Operation  
• Repetitive Avalanche Rated  
• Lead (Pb)-free Available  
RoHS*  
COMPLIANT  
Qg (Max.) (nC)  
39  
10  
Q
Q
gs (nC)  
gd (nC)  
19  
Configuration  
Single  
DESCRIPTION  
D
This new series of low charge Power MOSFETs achieve  
signiticantly lower gate charge over conventional MOSFETs.  
Utilizing the new LCDMOS technology, the device  
improvements are achieved without added product cost,  
allowing for reduced gate drive requirements and total  
system savings. In addition, reduced switching losses and  
improved efficiency are achievable in a variety of high  
frequency applications. Frequencies of a few MHz at high  
current are possible using the new low charge MOSFETs.  
TO-220  
G
S
D
G
S
These device improvements combined with the proven  
ruggedness and reliability that are characteristic of Power  
MOSFETs offer the designer a new standard in power  
transistors for switching applications.  
N-Channel MOSFET  
ORDERING INFORMATION  
Package  
TO-220  
IRF840LCPbF  
SiHF840LC-E3  
IRF840LC  
Lead (Pb)-free  
SnPb  
SiHF840LC  
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted  
PARAMETER  
SYMBOL  
LIMIT  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
500  
30  
V
VGS  
T
C = 25 °C  
8.0  
Continuous Drain Current  
V
GS at 10 V  
ID  
TC =100°C  
5.1  
A
Pulsed Drain Currenta  
IDM  
28  
Linear Derating Factor  
1.0  
W/°C  
mJ  
A
Single Pulse Avalanche Energyb  
Repetitive Avalanche Currenta  
Repetitive Avalanche Energya  
EAS  
IAR  
510  
8.0  
EAR  
13  
mJ  
W
Maximum Power Dissipation  
Peak Diode Recovery dV/dtc  
TC = 25 °C  
PD  
125  
3.5  
dV/dt  
TJ, Tstg  
V/ns  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)  
- 55 to + 150  
300d  
10  
°C  
for 10 s  
lbf · in  
N · m  
Mounting Torque  
6-32 or M3 screw  
1.1  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).  
b. VDD = 50 V, starting TJ = 25 °C, L = 14 mH, RG = 25 Ω, IAS = 8.0 A (see fig. 12).  
c. ISD ≤ 8.0 A, dI/dt ≤ 100 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.  
d. 1.6 mm from case.  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 91067  
S-Pending-Rev. A, 02-Jun-08  
www.vishay.com  
1
WORK-IN-PROGRESS  
12345678

中文翻译

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