Datasheet > IRF840L, SiHF840L

IRF840L, SiHF840L

更新时间： 2023-12-06 20:09:59

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
10页	215K
描述
Power MOSFET

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数据手册

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IRF840L, SiHF840L

www.vishay.com

Vishay Siliconix

Power MOSFET

FEATURES

I²PAK

(TO-262)

• Dynamic dV/dt rating

• Repetitive avalanche rated

• Fast switching

Available

• Ease of paralleling

• Simple drive requirements

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

N-Channel MOSFET

Note

This datasheet provides information about parts that are

RoHS-compliant and / or parts that are non RoHS-compliant. For

example, parts with lead (Pb) terminations are not RoHS-compliant.

Please see the information / tables in this datasheet for details

PRODUCT SUMMARY

V_DS(V)

500

DESCRIPTION

R_DS(on)(Ω)

V_GS= 10 V

0.85

Q_gmax. (nC)

9.3

Third generation power MOSFETs from Vishay provide the

designer with best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The I²PAK (TO-262) is a power package capable of

accommodating die sizes up to HEX-4. It provides the

highest power capability and lowest possible on-resistance.

The I²PAK (TO-262) is suitable for high current applications

because of its low internal connection resistance and can

dissipate up to 2.0 W.

_gs(nC)

_gd(nC)

Configuration

Single

ORDERING INFORMATION

Package

I²PAK (TO-262)

SiHF840L-GE3

IRF840LPbF

Lead (Pb)-free and Halogen-free

Lead (Pb)-free

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

500

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

T_C= 25 °C

_C= 100 °C

8.0

Continuous Drain Current

V_GSat 10 V

I_D

5.1

Pulsed Drain Current ^a

I_DM

Linear Derating Factor

1.0

W/°C

Single Pulse Avalanche Energy ^b

Repetitive Avalanche Current ^a

Repetitive Avalanche Energy ^a

E_AS

I_AR

510

8.0

E_AR

_C= 25 °C

125

Maximum Power Dissipation

P_D

V/ns

°C

T_C= 100 °C

Peak Diode Recovery dV/dt ^c

dV/dt

3.5

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak temperature) ^d

T_J, T_stg

-55 to +150

300

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)

b. V_DD= 50 V, starting T_J= 25 °C, L = 14 mH, R_g= 25 Ω, I_AS= 8.0 A (see fig. 12)

c. I_SD≤ 8.0 A, dI/dt ≤ 100 A/μs, V_DD≤ V_DS, T_J≤ 150 °C

d. 1.6 mm from case

S21-0901-Rev. D, 30-Aug-2021

Document Number: 91069

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...10

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与IRF840L, SiHF840L相关器件

型号	品牌	获取价格	描述	数据表
IRF840LC	VISHAY	获取价格	Power MOSFET
IRF840LC-002	INFINEON	获取价格	Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Meta
IRF840LC-003	INFINEON	获取价格	Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Meta
IRF840LC-003PBF	INFINEON	获取价格	Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Meta
IRF840LC-004	INFINEON	获取价格	Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Meta
IRF840LC-004PBF	INFINEON	获取价格	Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Meta
IRF840LC-005PBF	INFINEON	获取价格	Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Meta
IRF840LC-006	INFINEON	获取价格	Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Meta
IRF840LC-009	INFINEON	获取价格	Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Meta
IRF840LC-009PBF	INFINEON	获取价格	Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Meta

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