5秒后页面跳转
IRF840B_05 PDF预览

IRF840B_05

更新时间: 2024-02-25 14:18:31
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
10页 903K
描述
500V N-Channel MOSFET

IRF840B_05 数据手册

 浏览型号IRF840B_05的Datasheet PDF文件第2页浏览型号IRF840B_05的Datasheet PDF文件第3页浏览型号IRF840B_05的Datasheet PDF文件第4页浏览型号IRF840B_05的Datasheet PDF文件第5页浏览型号IRF840B_05的Datasheet PDF文件第6页浏览型号IRF840B_05的Datasheet PDF文件第7页 
February 2005  
IRF840B/IRFS840B  
500V N-Channel MOSFET  
General Description  
Features  
These N-Channel enhancement mode power field effect  
transistors are produced using Fairchild’s proprietary,  
planar, DMOS technology.  
8.0A, 500V, R  
= 0.8@V = 10 V  
DS(on) GS  
Low gate charge ( typical 41 nC)  
Low Crss ( typical 35 pF)  
Fast switching  
This advanced technology has been especially tailored to  
minimize on-state resistance, provide superior switching  
performance, and withstand high energy pulse in the  
avalanche and commutation mode. These devices are well  
suited for high efficiency switch mode power supplies,  
power factor correction and electronic lamp ballasts based  
on half bridge.  
100% avalanche tested  
Improved dv/dt capability  
D
G
TO-220  
IRF Series  
TO-220F  
IRFS Series  
G
D S  
G D  
S
S
Absolute Maximum Ratings  
T = 25°C unless otherwise noted  
C
Symbol  
Parameter  
IRF840B  
IRFS840B  
Units  
V
V
I
Drain-Source Voltage  
500  
DSS  
- Continuous (T = 25°C)  
Drain Current  
8.0  
5.1  
32  
8.0  
5.1  
32  
A
A
A
D
C
- Continuous (T = 100°C)  
C
I
(Note 1)  
Drain Current  
- Pulsed  
DM  
V
E
I
Gate-Source Voltage  
Single Pulsed Avalanche Energy  
Avalanche Current  
± 30  
320  
8.0  
13.4  
5.5  
V
mJ  
A
mJ  
V/ns  
W
GSS  
AS  
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
AR  
E
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
AR  
dv/dt  
P
Power Dissipation (T = 25°C)  
134  
44  
D
C
- Derate above 25°C  
Operating and Storage Temperature Range  
1.08  
0.35  
W/°C  
°C  
T , T  
-55 to +150  
300  
J
STG  
Maximum lead temperature for soldering purposes,  
T
°C  
L
1/8" from case for 5 seconds  
* Drain current limited by maximum junction temperature.  
Thermal Characteristics  
Symbol  
Parameter  
IRF840B  
IRFS840B  
2.86  
Units  
°C/W  
°C/W  
°C/W  
R
R
R
Thermal Resistance, Junction-to-Case Max.  
Thermal Resistance, Case-to-Sink Typ.  
Thermal Resistance, Junction-to-Ambient Max.  
0.93  
0.5  
62.5  
θJC  
--  
62.5  
θCS  
θJA  
©2005 Fairchild Semiconductor Corporation  
Rev. B, February 2005  

与IRF840B_05相关器件

型号 品牌 获取价格 描述 数据表
IRF840BJ69Z FAIRCHILD

获取价格

Power Field-Effect Transistor, 8A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal
IRF840D1 MOTOROLA

获取价格

8A, 500V, 0.85ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRF840F ETC

获取价格

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS(188.09 k)
IRF840FI STMICROELECTRONICS

获取价格

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
IRF840FP SUNTAC

获取价格

POWER MOSFET
IRF840FPBF INFINEON

获取价格

Power Field-Effect Transistor, 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide S
IRF840FX INFINEON

获取价格

Power Field-Effect Transistor, 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide S
IRF840FXPBF INFINEON

获取价格

Power Field-Effect Transistor, 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide S
IRF840HPBF VISHAY

获取价格

Power MOSFET
IRF840I A-POWER

获取价格

N-CHANNEL ENHANCEMENT MODE POWER MOSFET