5秒后页面跳转
捷配首页

Datasheet > IRF840B_05
IRF840B_05 PDF预览

IRF840B_05

更新时间： 2024-11-30 04:01:59
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
10页 903K
描述
500V N-Channel MOSFET

阅读下载

中文翻译

获取价格

IRF840B_05 数据手册

 浏览型号IRF840B_05的Datasheet PDF文件第2页浏览型号IRF840B_05的Datasheet PDF文件第3页浏览型号IRF840B_05的Datasheet PDF文件第4页浏览型号IRF840B_05的Datasheet PDF文件第5页浏览型号IRF840B_05的Datasheet PDF文件第6页浏览型号IRF840B_05的Datasheet PDF文件第7页 
February 2005  
IRF840B/IRFS840B  
500V N-Channel MOSFET  
General Description  
Features  
These N-Channel enhancement mode power field effect  
transistors are produced using Fairchild’s proprietary,  
planar, DMOS technology.  
•
•
•
•
•
•
8.0A, 500V, R  
= 0.8Ω @V = 10 V  
DS(on) GS  
Low gate charge ( typical 41 nC)  
Low Crss ( typical 35 pF)  
Fast switching  
This advanced technology has been especially tailored to  
minimize on-state resistance, provide superior switching  
performance, and withstand high energy pulse in the  
avalanche and commutation mode. These devices are well  
suited for high efficiency switch mode power supplies,  
power factor correction and electronic lamp ballasts based  
on half bridge.  
100% avalanche tested  
Improved dv/dt capability  
D
G
TO-220  
IRF Series  
TO-220F  
IRFS Series  
G
D S  
G D  
S
S
Absolute Maximum Ratings  
T = 25°C unless otherwise noted  
C
Symbol  
Parameter  
IRF840B  
IRFS840B  
Units  
V
V
I
Drain-Source Voltage  
500  
DSS  
- Continuous (T = 25°C)  
Drain Current  
8.0  
5.1  
32  
8.0  
5.1  
32  
A
A
A
D
C
- Continuous (T = 100°C)  
C
I
(Note 1)  
Drain Current  
- Pulsed  
DM  
V
E
I
Gate-Source Voltage  
Single Pulsed Avalanche Energy  
Avalanche Current  
± 30  
320  
8.0  
13.4  
5.5  
V
mJ  
A
mJ  
V/ns  
W
GSS  
AS  
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
AR  
E
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
AR  
dv/dt  
P
Power Dissipation (T = 25°C)  
134  
44  
D
C
- Derate above 25°C  
Operating and Storage Temperature Range  
1.08  
0.35  
W/°C  
°C  
T , T  
-55 to +150  
300  
J
STG  
Maximum lead temperature for soldering purposes,  
T
°C  
L
1/8" from case for 5 seconds  
* Drain current limited by maximum junction temperature.  
Thermal Characteristics  
Symbol  
Parameter  
IRF840B  
IRFS840B  
2.86  
Units  
°C/W  
°C/W  
°C/W  
R
R
R
Thermal Resistance, Junction-to-Case Max.  
Thermal Resistance, Case-to-Sink Typ.  
Thermal Resistance, Junction-to-Ambient Max.  
0.93  
0.5  
62.5  
θJC  
--  
62.5  
θCS  
θJA  
©2005 Fairchild Semiconductor Corporation  
Rev. B, February 2005  
1234567...10

中文翻译

下载PDF

与IRF840B_05相关器件

型号 品牌 获取价格 描述 数据表
IRF840BJ69Z FAIRCHILD

获取价格

 		Power Field-Effect Transistor, 8A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal
IRF840D1 MOTOROLA

获取价格

 		8A, 500V, 0.85ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRF840F ETC

获取价格

 		N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS(188.09 k)
IRF840FI STMICROELECTRONICS

获取价格

 		N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
IRF840FP SUNTAC

获取价格

 		POWER MOSFET
IRF840FPBF INFINEON

获取价格

 		Power Field-Effect Transistor, 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide S
IRF840FX INFINEON

获取价格

 		Power Field-Effect Transistor, 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide S
IRF840FXPBF INFINEON

获取价格

 		Power Field-Effect Transistor, 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide S
IRF840HPBF VISHAY

获取价格

 		Power MOSFET
IRF840I A-POWER

获取价格

 		N-CHANNEL ENHANCEMENT MODE POWER MOSFET

与IRF840B_05相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证