Datasheet > IRF840B_05

IRF840B_05

更新时间： 2024-01-18 00:40:48

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
10页	903K
描述
500V N-Channel MOSFET

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IRF840B_05 数据手册

February 2005

IRF840B/IRFS840B

500V N-Channel MOSFET

General Description

Features

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar, DMOS technology.

•

8.0A, 500V, R

= 0.8Ω @V = 10 V

DS(on) GS

Low gate charge ( typical 41 nC)

Low Crss ( typical 35 pF)

Fast switching

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switch mode power supplies,

power factor correction and electronic lamp ballasts based

on half bridge.

100% avalanche tested

Improved dv/dt capability

TO-220

IRF Series

TO-220F

IRFS Series

D S

G D

Absolute Maximum Ratings

T = 25°C unless otherwise noted

Symbol

Parameter

IRF840B

IRFS840B

Units

Drain-Source Voltage

500

DSS

- Continuous (T = 25°C)

Drain Current

8.0

5.1

8.0

5.1

- Continuous (T = 100°C)

(Note 1)

Drain Current

- Pulsed

Gate-Source Voltage

Single Pulsed Avalanche Energy

Avalanche Current

± 30

320

8.0

13.4

5.5

V/ns

GSS

(Note 2)

(Note 1)

(Note 3)

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

dv/dt

Power Dissipation (T = 25°C)

134

- Derate above 25°C

Operating and Storage Temperature Range

1.08

0.35

W/°C

°C

T , T

-55 to +150

300

STG

Maximum lead temperature for soldering purposes,

°C

1/8" from case for 5 seconds

* Drain current limited by maximum junction temperature.

Thermal Characteristics

Symbol

Parameter

IRF840B

IRFS840B

2.86

Units

°C/W

Thermal Resistance, Junction-to-Case Max.

Thermal Resistance, Case-to-Sink Typ.

Thermal Resistance, Junction-to-Ambient Max.

0.93

0.5

62.5

θJC

62.5

θCS

θJA

Rev. B, February 2005

12 3 4 5 6 7...10

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