Datasheet > IRF840HPBF

IRF840HPBF

更新时间： 2024-11-30 14:54:43

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	173K
描述
Power MOSFET

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中文翻译

获取价格

数据手册

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IRF840HPBF 数据手册

IRF840HPBF

Vishay Siliconix

www.vishay.com

Power MOSFET

FEATURES

• Low figure-of-merit (FOM) R_onx Q_g

• Low effective capacitance (C_o(er)

TO-220AB

)

• Reduced switching and conduction losses

• Avalanche energy rated (UIS)

• Material categorization: for definitions of

compliance please see www.vishay.com/doc?99912

APPLICATIONS

N-Channel MOSFET

• Server and telecom power supplies

• Switch mode power supplies (SMPS)

• Power factor correction power supplies (PFC)

• Lighting

- High-intensity discharge (HID)

- Fluorescent ballast lighting

• Industrial

PRODUCT SUMMARY

V_DS(V) at T_Jmax.

550

R_DS(on)typ. () at 25 °C

V_GS= 10 V

0.740

Q_gmax. (nC)

_gs(nC)

_gd(nC)

- Welding

- Induction heating

- Motor drives

Configuration

Single

- Battery chargers

- Solar (PV inverters)

ORDERING INFORMATION

Package

TO-220AB

Lead (Pb)-free and halogen-free

IRF840HPBF

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

500

UNIT

Drain-source voltage

Gate-source voltage

V_DS

V_GS

_C= 25 °C

7.3

Continuous drain current (T_J= 150 °C)

V_GSat 10 V

I_D

T_C= 100 °C

4.6

Pulsed drain current ^a

I_DM

Linear derating factor

Single pulse avalanche energy ^b

1.0

W/°C

E_AS

P_D

175

Maximum power dissipation

125

Operating junction and storage temperature range

Drain-source voltage slope

Reverse diode dv/dt ^d

T_J, T_stg

-55 to +150

100

°C

T_J= 125 °C

For 10 s

dv/dt

V/ns

°C

0.2

Soldering recommendations (peak temperature) ^c

260

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature

b. V_DD= 120 V, starting T_J= 25 °C, L = 14 mH, R_g= 25 , I_AS= 5 A

c. 1.6 mm from case

d. I_SD I_D, di/dt = 100 A/μs, starting T_J= 25 °C

S22-0794-Rev. A, 19-Sep-2022

Document Number: 92441

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7

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与IRF840HPBF相关器件

型号	品牌	获取价格	描述	数据表
IRF840I	A-POWER	获取价格	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
IRF840L	MOTOROLA	获取价格	Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Meta
IRF840L, SiHF840L	VISHAY	获取价格	Power MOSFET
IRF840LC	VISHAY	获取价格	Power MOSFET
IRF840LC-002	INFINEON	获取价格	Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Meta
IRF840LC-003	INFINEON	获取价格	Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Meta
IRF840LC-003PBF	INFINEON	获取价格	Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Meta
IRF840LC-004	INFINEON	获取价格	Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Meta
IRF840LC-004PBF	INFINEON	获取价格	Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Meta
IRF840LC-005PBF	INFINEON	获取价格	Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Meta

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